(Invited) Fabrication and Characterization of β-Ga2O3Heterojunction Rectifiers

Article Properties
  • Language
    English
  • DOI (url)
    10.1149/08507.0021ecst
  • Publication Date
    2018/04/09
  • Journal
    ECS Transactions
  • Indian UGC (journal)
  • Citations
    14
  • Marko J Tadjer
  • Lunet E Luna
  • Erin Cleveland
  • Karl D. Hobart
  • Fritz J Kub
Cite
Tadjer, Marko J, et al. “(Invited) Fabrication and Characterization of β-Ga2O3Heterojunction Rectifiers”. ECS Transactions, vol. 85, no. 7, 2018, pp. 21-26, https://doi.org/10.1149/08507.0021ecst.
Tadjer, M. J., Luna, L. E., Cleveland, E., Hobart, K. D., & Kub, F. J. (2018). (Invited) Fabrication and Characterization of β-Ga2O3Heterojunction Rectifiers. ECS Transactions, 85(7), 21-26. https://doi.org/10.1149/08507.0021ecst
Tadjer MJ, Luna LE, Cleveland E, Hobart KD, Kub FJ. (Invited) Fabrication and Characterization of β-Ga2O3Heterojunction Rectifiers. ECS Transactions. 2018;85(7):21-6.
Citations
Title Journal Journal Categories Citations Publication Date
Heterojunction Devices Fabricated from Sprayed n-Type Ga2O3, Combined with Sputtered p-Type NiO and Cu2O

 Nanomaterials
  • Science: Chemistry
  • Science: Chemistry: General. Including alchemy
  • Technology: Chemical technology
  • Science: Chemistry
  • Science: Physics
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
 2024
Recent advances in NiO/Ga2O3 heterojunctions for power electronics

 Journal of Semiconductors
  • Science: Physics
 25 2023
Fabrication of nanocrystalline Ga2O3-NiO heterojunctions for large-area low-dose X-ray imaging Applied Surface Science
  • Science: Chemistry: Physical and theoretical chemistry
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Science: Physics
  • Science: Physics
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
 3 2022
A state-of-art review on gallium oxide field-effect transistors

 Journal of Physics D: Applied Physics
  • Science: Chemistry: Physical and theoretical chemistry
  • Science: Physics
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Science: Physics
 13 2022
A review of metal–semiconductor contacts for β-Ga2O3

 Journal of Physics D: Applied Physics
  • Science: Chemistry: Physical and theoretical chemistry
  • Science: Physics
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Science: Physics
 11 2022
Citations Analysis
Category Category Repetition
Science: Physics11
Technology: Chemical technology11
Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials11
Science: Chemistry: Physical and theoretical chemistry7
Science: Chemistry4
Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics2
Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks2
Technology: Chemical technology: Biotechnology2
Science: Chemistry: General. Including alchemy1
The category Science: Physics 11 is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS and was published in 2018. The most recent citation comes from a 2024 study titled Heterojunction Devices Fabricated from Sprayed n-Type Ga2O3, Combined with Sputtered p-Type NiO and Cu2O. This article reached its peak citation in 2022, with 3 citations. It has been cited in 10 different journals, 20% of which are open access. Among related journals, the Journal of Physics D: Applied Physics cited this research the most, with 2 citations. The chart below illustrates the annual citation trends for this article.
Citations used this article by year