Fabrication of nanocrystalline Ga2O3-NiO heterojunctions for large-area low-dose X-ray imaging
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date2022/12/01
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Journal
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Indian UGC (journal)
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Refrences40
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Citations3
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Zhipeng Zhang
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Manni Chen
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Runze Zhan
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Huanjun Chen
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Kai Wang
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Shaozhi Deng
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Jun Chen
Cite
Zhang, Zhipeng, et al. “Fabrication of Nanocrystalline Ga2O3-NiO Heterojunctions for Large-Area Low-Dose X-Ray Imaging”. Applied Surface Science, vol. 604, 2022, p. 154623, https://doi.org/10.1016/j.apsusc.2022.154623.
Zhang, Z., Chen, M., Zhan, R., Chen, H., Wang, K., Deng, S., & Chen, J. (2022). Fabrication of nanocrystalline Ga2O3-NiO heterojunctions for large-area low-dose X-ray imaging. Applied Surface Science, 604, 154623. https://doi.org/10.1016/j.apsusc.2022.154623
Zhang Z, Chen M, Zhan R, Chen H, Wang K, Deng S, et al. Fabrication of nanocrystalline Ga2O3-NiO heterojunctions for large-area low-dose X-ray imaging. Applied Surface Science. 2022;604:154623.
Journal Categories
Science
Chemistry
Physical and theoretical chemistry
Science
Physics
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
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Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| High-Responsivity Solar-Blind Photodetectors Formed by Ga2O3/p-GaN Bipolar Heterojunctions | ACS Photonics |
| 22 | 2022 |
| High-Performance X-ray Detector Based on Single-Crystal β-Ga2O3:Mg | ACS Applied Materials & Interfaces |
| 33 | 2021 |
| Fast X-ray detectors based on bulk β-Ga2O3 (Fe) | Journal of Materials Science |
| 22 | 2020 |
| Approaching the Theoretical Light Yield Limit in CsI (Tl) Scintillator Single Crystals by a Low-Temperature Solution Method | Crystal Growth & Design |
| 16 | 2020 |
| All-Oxide NiO/Ga2O3 p–n Junction for Self-Powered UV Photodetector | ACS Applied Electronic Materials |
| 140 | 2020 |
Refrences Analysis
The category
Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials 40
is the most frequently represented among the references in this article. It primarily includes studies from Advanced Functional Materials and Journal of Physics D: Applied Physics. The chart below illustrates the number of referenced publications per year.
Refrences used by this article by year
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| Low dark current and high stability X-ray detector based on FAPbI3/Ga2O3 heterojunction | Journal of Alloys and Compounds |
| 2 | 2023 |
| Ga2O3-based X-ray detector and scintillators: A review | Materials Today Physics |
| 5 | 2023 |
X-ray Detectors Based on Ga2O3 Microwires | Materials |
| 2 | 2023 |
Citations Analysis
The category
Science: Chemistry 3
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled X-ray Detectors Based on Ga2O3 Microwires and was published in 2023. The most recent citation comes from a 2023 study titled X-ray Detectors Based on Ga2O3 Microwires. This article reached its peak citation in 2023, with 3 citations. It has been cited in 3 different journals. Among related journals, the Materials cited this research the most, with 1 citations. The chart below illustrates the annual citation trends for this article.