A review of metal–semiconductor contacts for β-Ga2O3
Article Properties
Abstract
Cite
Lu, Chao, et al. “A Review of metal–semiconductor Contacts for β-Ga2O3”. Journal of Physics D: Applied Physics, vol. 55, no. 46, 2022, p. 463002, https://doi.org/10.1088/1361-6463/ac8818.
Lu, C., Ji, X., Liu, Z., Yan, X., Lu, N., Li, P., & Tang, W. (2022). A review of metal–semiconductor contacts for β-Ga2O3. Journal of Physics D: Applied Physics, 55(46), 463002. https://doi.org/10.1088/1361-6463/ac8818
Lu C, Ji X, Liu Z, Yan X, Lu N, Li P, et al. A review of metal–semiconductor contacts for β-Ga2O3. Journal of Physics D: Applied Physics. 2022;55(46):463002.
Journal Categories
Science
Chemistry
Physical and theoretical chemistry
Science
Physics
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
You May Also Like
- Polymorphic transitions in single crystals: A new molecular dynamics method
- A comprehensive review of ZnO materials and devices
- Detailed Balance Limit of Efficiency of p-n Junction Solar Cells
- Metal oxide thin film based supercapacitors
- A new era for liquid crystal research: Applications of liquid crystals in soft matter nano-, bio- and microtechnology
Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications | ACS Applied Electronic Materials |
| 36 | 2022 |
Comparison of historical and current temperatures in show caves (Slovenia) | SN Applied Sciences |
| 5 | 2022 |
| Performance Improvement of a β-Ga2O3-based solar-blind metal oxide semiconductor field-effect phototransistor using in situ ozone pretreatment technology | IEEE Transactions on Electron Devices |
| 2022 | |
| Multilevel oxygen-vacancy conductive filaments in β-Ga2O3 based resistive random access memory | Physical Chemistry Chemical Physics |
| 2021 | |
Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors | Science |
| 276 | 2020 |
Refrences Analysis
The category
Science: Physics 187
is the most frequently represented among the references in this article. It primarily includes studies from Applied Physics Letters The chart below illustrates the number of referenced publications per year.
Refrences used by this article by year
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| Defect accumulation in β-Ga2O3 implanted with Yb | Acta Materialia |
| 2024 | |
| Anisotropic Electron Mobility and Contact Resistance of β-Ga2O3 Obtained via Radio Frequency Transmission Line Methods on Schottky Devices | ACS Nano |
| 1 | 2024 |
Radiation effects of high-fluence reactor neutron on Ni/
β
-Ga2O3 Schottky barrier diodes | Applied Physics Letters |
| 2024 | |
Interface-induced origin of Schottky-to-Ohmic-to-Schottky conversion in non-conventional contact to β-Ga2O3 | Applied Physics Letters |
| 2024 | |
| Self-Powered Fast Response X-Ray Detector Based on Vertical p-NiO/Ga2O3 Heterojunction Diode | IEEE Photonics Technology Letters |
| 2024 |
Citations Analysis
The category
Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials 10
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Flexible and Self-Powered Solar-Blind UV Photodetector Based on the Ti/α-Ga2O3/Electrolyte Heterojunction with High Stability and was published in 2023. The most recent citation comes from a 2024 study titled A Review of β-Ga2O3 Power Diodes. This article reached its peak citation in 2024, with 6 citations. It has been cited in 9 different journals. Among related journals, the Applied Physics Letters cited this research the most, with 3 citations. The chart below illustrates the annual citation trends for this article.