A state-of-art review on gallium oxide field-effect transistors

Article Properties
Abstract
Cite
Qiao, Rundi, et al. “A State-of-Art Review on Gallium Oxide Field-Effect Transistors”. Journal of Physics D: Applied Physics, vol. 55, no. 38, 2022, p. 383003, https://doi.org/10.1088/1361-6463/ac7c44.
Qiao, R., Zhang, H., Zhao, S., Yuan, L., Jia, R., Peng, B., & Zhang, Y. (2022). A state-of-art review on gallium oxide field-effect transistors. Journal of Physics D: Applied Physics, 55(38), 383003. https://doi.org/10.1088/1361-6463/ac7c44
Qiao R, Zhang H, Zhao S, Yuan L, Jia R, Peng B, et al. A state-of-art review on gallium oxide field-effect transistors. Journal of Physics D: Applied Physics. 2022;55(38):383003.
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Refrences
Title Journal Journal Categories Citations Publication Date
10.1109/TED.2021.3053189 IEEE Transactions on Electron Devices
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks
  • Science: Physics
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
2021
10.1109/LED.2021.3072052 IEEE Electron Device Letters
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
2021
10.1109/TDMR.2020.3046530 2021
10.1109/TED.2020.3013242 IEEE Transactions on Electron Devices
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks
  • Science: Physics
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
2020
10.1109/TED.2020.2974794 IEEE Transactions on Electron Devices
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks
  • Science: Physics
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
2020
Citations
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  • Technology: Chemical technology
  • Science: Physics
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  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
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  • Science: Physics
  • Technology: Chemical technology
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2024
Citations Analysis
The category Science: Physics 10 is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications and was published in 2023. The most recent citation comes from a 2024 study titled A Review of β-Ga2O3 Power Diodes. This article reached its peak citation in 2023, with 7 citations. It has been cited in 11 different journals, 9% of which are open access. Among related journals, the Materials cited this research the most, with 2 citations. The chart below illustrates the annual citation trends for this article.
Citations used this article by year