Title | Journal | Journal Categories | Citations | Publication Date |
---|---|---|---|---|
10.1109/TED.2021.3053189 | IEEE Transactions on Electron Devices |
| 2021 | |
10.1109/LED.2021.3072052 | IEEE Electron Device Letters |
| 2021 | |
10.1109/TDMR.2020.3046530 | 2021 | |||
10.1109/TED.2020.3013242 | IEEE Transactions on Electron Devices |
| 2020 | |
10.1109/TED.2020.2974794 | IEEE Transactions on Electron Devices |
| 2020 |
Title | Journal | Journal Categories | Citations | Publication Date |
---|---|---|---|---|
Field-plated and back-barrier engineered wide-bandgap III-nitride/β-Ga2O3 nano-HEMT for emerging RF/microwave micro/nanoelectronics applications | Microelectronics Reliability |
| 2024 | |
Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications | Engineering Research Express |
| 2024 | |
Investigation of β-Ga2O3 MOSFET With Double Drift Layers by TCAD Simulation | IEEE Transactions on Electron Devices |
| 2024 | |
High-performance a-Ga2O3 solar-blind photodetectors by pulsed magnetron sputtering deposition | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films |
| 2024 | |
Comparative Radiation Response of GaN and Ga2O3 Exposed to Ground-Level Neutrons | Crystals |
| 2024 |