Interface-induced origin of Schottky-to-Ohmic-to-Schottky conversion in non-conventional contact to β-Ga2O3
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date2024/01/08
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Journal
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Indian UGC (journal)
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Refrences24
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Damanpreet Kaur Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar , Rupnagar, Punjab 140001, India ORCID (unauthenticated)
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Rohit Dahiya Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar , Rupnagar, Punjab 140001, India ORCID (unauthenticated)
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Shivani Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar , Rupnagar, Punjab 140001, India ORCID (unauthenticated)
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Mukesh Kumar Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar , Rupnagar, Punjab 140001, India ORCID (unauthenticated)
Abstract
Cite
Kaur, Damanpreet, et al. “Interface-Induced Origin of Schottky-to-Ohmic-to-Schottky Conversion in Non-Conventional Contact to β-Ga2O3”. Applied Physics Letters, vol. 124, no. 2, 2024, https://doi.org/10.1063/5.0187009.
Kaur, D., Dahiya, R., & Kumar, M. (2024). Interface-induced origin of Schottky-to-Ohmic-to-Schottky conversion in non-conventional contact to β-Ga2O3. Applied Physics Letters, 124(2). https://doi.org/10.1063/5.0187009
Kaur D, Dahiya R, Kumar M. Interface-induced origin of Schottky-to-Ohmic-to-Schottky conversion in non-conventional contact to β-Ga2O3. Applied Physics Letters. 2024;124(2).
Journal Categories
Science
Chemistry
Physical and theoretical chemistry
Science
Physics
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
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Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| Strain effects on the optoelectronic performance of ultra-wide band gap polycrystalline β-Ga2O3 thin film grown on differently-oriented Silicon substrates for solar blind photodetector | Applied Surface Science |
| 5 | 2023 |
Dependence of persistent photoconductivity on the thickness of β-Ga2O3 thin film photodetectors on c-plane sapphire via magnetron sputtering | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films |
| 2 | 2023 |
A review of metal–semiconductor contacts for β-Ga2O3 | Journal of Physics D: Applied Physics |
| 11 | 2022 |
Critical review of Ohmic and Schottky contacts to β-Ga2O3 | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films |
| 14 | 2022 |
| A strategic review on gallium oxide based power electronics: Recent progress and future prospects | Materials Today Communications | 20 | 2022 |
Refrences Analysis
The category
Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials 22
is the most frequently represented among the references in this article. It primarily includes studies from Applied Physics Letters The chart below illustrates the number of referenced publications per year.