Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors

Article Properties
  • Language
    English
  • DOI (url)
    10.1126/science.289.5484.1530
  • Publication Date
    2000/09/01
  • Journal
    Science
  • Indian UGC (journal)
  • Refrences
    29
  • Citations
    276
  • S. A. Solin NEC Research Institute, 4 Independence Way, Princeton, NJ 08540, USA.
  • Tineke Thio NEC Research Institute, 4 Independence Way, Princeton, NJ 08540, USA.
  • D. R. Hines NEC Research Institute, 4 Independence Way, Princeton, NJ 08540, USA.
  • J. J. Heremans Department of Physics and Astronomy, Ohio University, Athens, OH 45701, USA.
Abstract
Cite
Solin, S. A., et al. “Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors”. Science, vol. 289, no. 5484, 2000, pp. 1530-2, https://doi.org/10.1126/science.289.5484.1530.
Solin, S. A., Thio, T., Hines, D. R., & Heremans, J. J. (2000). Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors. Science, 289(5484), 1530-1532. https://doi.org/10.1126/science.289.5484.1530
Solin SA, Thio T, Hines DR, Heremans JJ. Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors. Science. 2000;289(5484):1530-2.
Journal Category
Science
Science (General)
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Citations Analysis
Category Category Repetition
Science: Physics188
Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials173
Technology: Chemical technology169
Science: Chemistry: Physical and theoretical chemistry106
Science: Chemistry76
Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks19
Science: Science (General)16
Science: Chemistry: General. Including alchemy11
Science8
Science: Mathematics: Instruments and machines7
Medicine7
Technology: Mining engineering. Metallurgy6
Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics4
Technology: Engineering (General). Civil engineering (General)4
Science: Chemistry: Analytical chemistry3
Science: Mathematics2
Technology: Electrical engineering. Electronics. Nuclear engineering1
Science: Science (General): Cybernetics: Information theory1
Technology: Electrical engineering. Electronics. Nuclear engineering: Telecommunication1
Technology: Chemical technology: Polymers and polymer manufacture1
Technology: Electrical engineering. Electronics. Nuclear engineering: Production of electric energy or power. Powerplants. Central stations1
Technology: Mechanical engineering and machinery: Renewable energy sources1
Social Sciences: Industries. Land use. Labor: Special industries and trades: Energy industries. Energy policy. Fuel trade1
Technology: Environmental technology. Sanitary engineering1
Science: Mathematics: Instruments and machines: Electronic computers. Computer science1
Science: Chemistry: Inorganic chemistry1
Science: Physics: Nuclear and particle physics. Atomic energy. Radioactivity1
The category Science: Physics 188 is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Geometrical Magnetothermopower in Semiconductors and was published in 2001. The most recent citation comes from a 2024 study titled Electrical properties of permalloy/Si (100) thin films. This article reached its peak citation in 2013, with 18 citations. It has been cited in 106 different journals, 10% of which are open access. Among related journals, the Applied Physics Letters cited this research the most, with 44 citations. The chart below illustrates the annual citation trends for this article.
Citations used this article by year