Defect accumulation in β-Ga2O3 implanted with Yb

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Sarwar, Mahwish, et al. “Defect Accumulation in β-Ga2O3 Implanted With Yb”. Acta Materialia, vol. 268, 2024, p. 119760, https://doi.org/10.1016/j.actamat.2024.119760.
Sarwar, M., Ratajczak, R., Mieszczynski, C., Wierzbicka, A., Gieraltowska, S., Heller, R., Eisenwinder, S., Wozniak, W., & Guziewicz, E. (2024). Defect accumulation in β-Ga2O3 implanted with Yb. Acta Materialia, 268, 119760. https://doi.org/10.1016/j.actamat.2024.119760
Sarwar M, Ratajczak R, Mieszczynski C, Wierzbicka A, Gieraltowska S, Heller R, et al. Defect accumulation in β-Ga2O3 implanted with Yb. Acta Materialia. 2024;268:119760.
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Refrences Analysis
Category Category Repetition
Science: Physics23
Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials18
Technology: Chemical technology14
Science: Chemistry: Physical and theoretical chemistry12
Science: Chemistry6
Science: Science (General)4
Science3
Technology: Engineering (General). Civil engineering (General)2
Science: Chemistry: Crystallography1
Science: Chemistry: General. Including alchemy1
Science: Chemistry: Analytical chemistry1
Medicine1
Technology: Mining engineering. Metallurgy1
Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks1
The category Science: Physics 23 is the most frequently represented among the references in this article. It primarily includes studies from Applied Physics Letters The chart below illustrates the number of referenced publications per year.
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