Investigation of β-Ga2O3 MOSFET With Double Drift Layers by TCAD Simulation
Article Properties
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DOI (url)
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Publication Date2024/01/01
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Indian UGC (journal)
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Refrences41
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Xiaole Jia State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China
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Yibo Wang Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou, China ORCID (unauthenticated)
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Cizhe Fang Emerging Device and Chip Laboratory, Hangzhou Institute of Technology, Xidian University, Hangzhou, China
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Haodong Hu State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China ORCID (unauthenticated)
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Yan Liu State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China ORCID (unauthenticated)
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Zhengdong Luo State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China
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Yue Hao State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China ORCID (unauthenticated)
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Genquan Han State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China ORCID (unauthenticated)
Cite
Jia, Xiaole, et al. “Investigation of β-Ga2O3 MOSFET With Double Drift Layers by TCAD Simulation”. IEEE Transactions on Electron Devices, vol. 71, no. 1, 2024, pp. 496-01, https://doi.org/10.1109/ted.2023.3337756.
Jia, X., Wang, Y., Fang, C., Hu, H., Liu, Y., Luo, Z., Hao, Y., & Han, G. (2024). Investigation of β-Ga2O3 MOSFET With Double Drift Layers by TCAD Simulation. IEEE Transactions on Electron Devices, 71(1), 496-501. https://doi.org/10.1109/ted.2023.3337756
Jia X, Wang Y, Fang C, Hu H, Liu Y, Luo Z, et al. Investigation of β-Ga2O3 MOSFET With Double Drift Layers by TCAD Simulation. IEEE Transactions on Electron Devices. 2024;71(1):496-501.
Journal Categories
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Physics
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Electric apparatus and materials
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Technology
Electrical engineering
Electronics
Nuclear engineering
Electronics
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Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| Recent progress in Ga2O3power devices | Semiconductor Science and Technology |
| 743 | 2016 |
A state-of-art review on gallium oxide field-effect transistors | Journal of Physics D: Applied Physics |
| 13 | 2022 |
N-type doping of low-pressure chemical vapor deposition grown β-Ga2O3 thin films using solid-source germanium | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films |
| 14 | 2021 |
| 10.1109/iedm.2018.8614693 | ||||
| Electrothermal Characteristics of Delta-Doped $\beta$ -Ga2O3 Metal–Semiconductor Field-Effect Transistors | IEEE Transactions on Electron Devices |
| 3 | 2019 |