Comparative Radiation Response of GaN and Ga2O3 Exposed to Ground-Level Neutrons

Article Properties
  • Language
    English
  • Publication Date
    2024/01/26
  • Journal
  • Indian UGC (journal)
  • Refrences
    42
  • Jean-Luc Autran Aix-Marseille Univ, CNRS, IM2NP (UMR 7334), 13397 Marseille CEDEX 20, FranceUniv. Rennes, CNRS, IPR (UMR 6251), 35042 Rennes CEDEX, France ORCID (unauthenticated)
  • Daniela Munteanu Aix-Marseille Univ, CNRS, IM2NP (UMR 7334), 13397 Marseille CEDEX 20, France ORCID (unauthenticated)
Abstract
Cite
Autran, Jean-Luc, and Daniela Munteanu. “Comparative Radiation Response of GaN and Ga2O3 Exposed to Ground-Level Neutrons”. Crystals, vol. 14, no. 2, 2024, p. 128, https://doi.org/10.3390/cryst14020128.
Autran, J.-L., & Munteanu, D. (2024). Comparative Radiation Response of GaN and Ga2O3 Exposed to Ground-Level Neutrons. Crystals, 14(2), 128. https://doi.org/10.3390/cryst14020128
Autran JL, Munteanu D. Comparative Radiation Response of GaN and Ga2O3 Exposed to Ground-Level Neutrons. Crystals. 2024;14(2):128.
Journal Categories
Science
Chemistry
Science
Chemistry
Crystallography
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
Refrences
Title Journal Journal Categories Citations Publication Date
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  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
3 2023
Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes

Journal of Applied Physics
  • Science: Chemistry: Physical and theoretical chemistry
  • Science: Physics
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Science: Physics
3 2023
An Analysis of the Significance of the 14N(n,p)14C Reaction for Single-Event Upsets Induced by Thermal Neutrons in SRAMs IEEE Transactions on Nuclear Science
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Nuclear engineering. Atomic power
  • Technology: Electrical engineering. Electronics. Nuclear engineering
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Science: Physics
2023
Characterization and simulation of terrestrial neutron induced destructive single-event effects in Gallium Nitride (GaN) power devices IEEE Transactions on Nuclear Science
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Nuclear engineering. Atomic power
  • Technology: Electrical engineering. Electronics. Nuclear engineering
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Science: Physics
2023
Neutron Displacement Damage cross Section in GaN: Numerical Evaluations and Differences with Si IEEE Transactions on Nuclear Science
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Nuclear engineering. Atomic power
  • Technology: Electrical engineering. Electronics. Nuclear engineering
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Science: Physics
2023