Polarization memory effect in the photoluminescence of nc-Si−SiOx light-emitting structures
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date2016/06/02
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Journal
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Indian UGC (journal)
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Refrences30
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Citations5
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Katerina Michailovska
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Ivan Indutnyi
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Petro Shepeliavyi
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Mykola Sopinskyy
Cite
Michailovska, Katerina, et al. “Polarization Memory Effect in the Photoluminescence of Nc-Si−SiOx Light-Emitting Structures”. Nanoscale Research Letters, vol. 11, no. 1, 2016, https://doi.org/10.1186/s11671-016-1496-4.
Michailovska, K., Indutnyi, I., Shepeliavyi, P., & Sopinskyy, M. (2016). Polarization memory effect in the photoluminescence of nc-Si−SiOx light-emitting structures. Nanoscale Research Letters, 11(1). https://doi.org/10.1186/s11671-016-1496-4
Michailovska K, Indutnyi I, Shepeliavyi P, Sopinskyy M. Polarization memory effect in the photoluminescence of nc-Si−SiOx light-emitting structures. Nanoscale Research Letters. 2016;11(1).
Journal Categories
Science
Chemistry
Science
Physics
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| Conditions for a direct band gap in Si quantum wires | Superlattices and Microstructures |
| 14 | 1998 |
| Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| 4 | 2015 |
| Polarization conversion effect in obliquely deposited SiOx films | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| 10 | 2011 |
Polarization of photoluminescence excitation and emission spectra of silicon nanorods within single Si/SiO2 nanowires | physica status solidi c | 7 | 2011 | |
| 10.1134/S1063782610020120 | Semiconductors |
| 2010 |
Refrences Analysis
The category
Science: Physics 17
is the most frequently represented among the references in this article. It primarily includes studies from Physical Review B The chart below illustrates the number of referenced publications per year.
Refrences used by this article by year
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
Enhancement and localization of atomistic polarity and polarizability memory in light scattering upon hydrogenation of luminescent spherical 1 nm Si nanoparticles | AIP Advances |
| 1 | 2023 |
| Polarized luminescence of silicon nanoparticles formed in (SiOx–SiOy)n superlattice | Applied Nanoscience |
| 1 | 2021 |
| Polarized luminescence of nc-Si–SiOx nanostructures on silicon substrates with patterned surface | Applied Nanoscience |
| 2018 | |
| THE INFLUENCE OF THE PERIODIC RELIEF OF THE SILICON SUBSTRATE ON POLARIZATION OF PHOTOLUMINESCENCE OBSERVED IN nc-Si–SiOx NANOSTRUCTURES | Optoèlektronika i poluprovodnikovaâ tehnika | 2017 | ||
| Optical properties of thin nanosilicon films | Optical Materials |
| 3 | 2016 |
Citations Analysis
The category
Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials 4
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Optical properties of thin nanosilicon films and was published in 2016. The most recent citation comes from a 2023 study titled Enhancement and localization of atomistic polarity and polarizability memory in light scattering upon hydrogenation of luminescent spherical 1 nm Si nanoparticles. This article reached its peak citation in 2023, with 1 citations. It has been cited in 4 different journals, 25% of which are open access. Among related journals, the Applied Nanoscience cited this research the most, with 2 citations. The chart below illustrates the annual citation trends for this article.