Conditions for a direct band gap in Si quantum wires

Article Properties
Cite
Horiguchi, S. “Conditions for a Direct Band Gap in Si Quantum Wires”. Superlattices and Microstructures, vol. 23, no. 2, 1998, pp. 355-64, https://doi.org/10.1006/spmi.1996.0340.
Horiguchi, S. (1998). Conditions for a direct band gap in Si quantum wires. Superlattices and Microstructures, 23(2), 355-364. https://doi.org/10.1006/spmi.1996.0340
Horiguchi S. Conditions for a direct band gap in Si quantum wires. Superlattices and Microstructures. 1998;23(2):355-64.
Journal Category
Science
Physics
Citations
Title Journal Journal Categories Citations Publication Date
Introductory lecture: origins and applications of efficient visible photoluminescence from silicon-based nanostructures

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 2018
THE INFLUENCE OF THE PERIODIC RELIEF OF THE SILICON SUBSTRATE ON POLARIZATION OF PHOTOLUMINESCENCE OBSERVED IN nc-Si–SiOx NANOSTRUCTURES Optoèlektronika i poluprovodnikovaâ tehnika 2017
Polarized photoluminescence of nc-Si–SiO x nanostructures Semiconductors
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 2016
Polarization memory effect in the photoluminescence of nc-Si−SiOx light-emitting structures Nanoscale Research Letters
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 5 2016
Citations Analysis
Category Category Repetition
Science: Physics7
Technology: Chemical technology7
Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials7
Science: Chemistry: Physical and theoretical chemistry4
Science: Chemistry4
Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks1
Science: Chemistry: Analytical chemistry1
The category Science: Physics 7 is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Interband Transitions in Si Quantum Wires grown in {100} plane and was published in 2000. The most recent citation comes from a 2020 study titled Introductory lecture: origins and applications of efficient visible photoluminescence from silicon-based nanostructures. This article reached its peak citation in 2002, with 3 citations. It has been cited in 12 different journals, 8% of which are open access. Among related journals, the Journal of Applied Physics cited this research the most, with 2 citations. The chart below illustrates the annual citation trends for this article.
Citations used this article by year