Polarization conversion effect in obliquely deposited SiOx films

Article Properties
Cite
Sopinskyy, M. V. “Polarization Conversion Effect in Obliquely Deposited SiOx Films”. Semiconductor Physics, Quantum Electronics and Optoelectronics, vol. 14, no. 3, 2011, pp. 273-8, https://doi.org/10.15407/spqeo14.03.273.
Sopinskyy, M. V. (2011). Polarization conversion effect in obliquely deposited SiOx films. Semiconductor Physics, Quantum Electronics and Optoelectronics, 14(3), 273-278. https://doi.org/10.15407/spqeo14.03.273
Sopinskyy MV. Polarization conversion effect in obliquely deposited SiOx films. Semiconductor Physics, Quantum Electronics and Optoelectronics. 2011;14(3):273-8.
Journal Category
Science
Physics
Refrences
Title Journal Journal Categories Citations Publication Date
Surface self-ordering in obliquely deposited As2S3 films. 2008
Visible photoluminescence from annealed porous SiOx films. 2005
Microfractography of thin films. 1966
Fractals Scaling and Growth Far from Equilibrium 1998
Surface Growth 1996
Citations
Title Journal Journal Categories Citations Publication Date
Generalized Null-Ellipsometry in the Polarizer–Sample–Analyzer Scheme Optics and Spectroscopy
  • Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics
  • Science: Physics: Optics. Light
  • Science: Chemistry: Analytical chemistry
  • Science: Chemistry: Analytical chemistry
  • Science: Chemistry
 2022
Polarized luminescence of silicon nanoparticles formed in (SiOx–SiOy)n superlattice Applied Nanoscience
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Chemical technology
  • Science: Physics
 1 2021
The effect of fluorine–hydrogen treatment on the photoluminescent properties of multilayer (nc-Si–SiOx–SiOy)n nanostructures with porous barrier layers Applied Nanoscience
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Chemical technology
  • Science: Physics
 1 2020
Polarized luminescence of nc-Si–SiOx nanostructures on silicon substrates with patterned surface Applied Nanoscience
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Technology: Chemical technology
  • Science: Physics
 2018
PHOTOLUMINESCENCE PROPERTIES OF SILICON NANOPARTICLES IN MULTILAYERED (SiOx-SiOy)n STRUCTURES WITH POROUS INSULATING LAYERS Optoèlektronika i poluprovodnikovaâ tehnika 2018
Citations Analysis
Category Category Repetition
Science: Physics7
Technology: Chemical technology5
Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials5
Science: Chemistry3
Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics2
Science: Physics: Optics. Light2
Science: Chemistry: Analytical chemistry2
The category Science: Physics 7 is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Ellipsometric study on the formation of nanocomposites by annealing SiO x films in oxygen-containing media and was published in 2015. The most recent citation comes from a 2022 study titled Generalized Null-Ellipsometry in the Polarizer–Sample–Analyzer Scheme. This article reached its peak citation in 2018, with 2 citations. It has been cited in 7 different journals, 28% of which are open access. Among related journals, the Applied Nanoscience cited this research the most, with 3 citations. The chart below illustrates the annual citation trends for this article.
Citations used this article by year