How Good Can Monolayer MoS2 Transistors Be?
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date2011/08/02
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Journal
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Indian UGC (journal)
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Refrences24
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Citations1,248
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Youngki Yoon Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
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Kartik Ganapathi Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
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Sayeef Salahuddin Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
Journal Categories
Science
Chemistry
Science
Chemistry
General
Including alchemy
Science
Chemistry
Physical and theoretical chemistry
Science
Physics
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| Single-layer MoS2 transistors | Nature Nanotechnology |
| 11,943 | 2011 |
| 10.1103/PhysRevLett.105.136805 | Physical Review Letters |
| 2010 | |
| Graphene transistors | Nature Nanotechnology |
| 4,242 | 2010 |
| Emerging Photoluminescence in Monolayer MoS2 | Nano Letters |
| 7,459 | 2010 |
| Top-Gated Graphene Nanoribbon Transistors with Ultrathin High-k Dielectrics | Nano Letters |
| 141 | 2010 |
Refrences Analysis
The category
Science: Physics 18
is the most frequently represented among the references in this article. It primarily includes studies from Physical Review Letters and Nano Letters. The chart below illustrates the number of referenced publications per year.
Refrences used by this article by year
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
Enhanced Performance of All‐Inorganic Lead Halide Perovskite/MoS2 Heterojunction Photodetectors by Achieving Interfacial Carrier Separation | physica status solidi (a) |
| 2024 | |
Covalently‐Bonded Laminar Assembly of Van der Waals Semiconductors with Polymers: Toward High‐Performance Flexible Devices | Small |
| 2024 | |
Two‐Dimensional Heterostructure Complementary Logic Enabled by Optical Writing | Small Science |
| 2024 | |
| Theoretical study on the effect of shear deformation on MoTe2 as cathode material for calcium ion batteries | Journal of Molecular Modeling |
| 2024 | |
| MoSe2/p-GaN heterojunction for enhanced UV and NIR photodetector | Journal of Materials Science: Materials in Electronics |
| 1 | 2024 |
Citations Analysis
The category
Technology: Chemical technology 851
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Integrated Circuits and Logic Operations Based on Single-Layer MoS2 and was published in 2011. The most recent citation comes from a 2024 study titled Electrostatically doped ballistic transition metal dichalcogenide tunnel field-effect transistors. This article reached its peak citation in 2016, with 145 citations. It has been cited in 262 different journals, 13% of which are open access. Among related journals, the Applied Physics Letters cited this research the most, with 59 citations. The chart below illustrates the annual citation trends for this article.