Top-Gated Graphene Nanoribbon Transistors with Ultrathin High-k Dielectrics
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date2010/04/09
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Journal
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Indian UGC (journal)
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Refrences36
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Citations141
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Lei Liao Department of Chemistry and Biochemistry
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Jingwei Bai Department of Materials Science and Engineering
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Rui Cheng Department of Materials Science and Engineering
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Yung-Chen Lin Department of Materials Science and Engineering
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Shan Jiang Department of Chemistry and Biochemistry
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Yu Huang Department of Materials Science and EngineeringCalifornia Nanosystems Institute
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Xiangfeng Duan Department of Chemistry and BiochemistryCalifornia Nanosystems Institute
Journal Categories
Science
Chemistry
Science
Chemistry
General
Including alchemy
Science
Chemistry
Physical and theoretical chemistry
Science
Physics
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| 10.1103/PhysRevLett.104.056801 | Physical Review Letters |
| 2010 | |
| 10.1109/LED.2009.2034876 | IEEE Electron Device Letters |
| 2010 | |
| Energy and transport gaps in etched graphene nanoribbons | Semiconductor Science and Technology |
| 51 | 2010 |
| Single-layer graphene on Al2O3/Si substrate: better contrast and higher performance of graphene transistors | Nanotechnology |
| 78 | 2010 |
| Graphene nanomesh | Nature Nanotechnology |
| 1,160 | 2010 |
Refrences Analysis
The category
Science: Physics 33
is the most frequently represented among the references in this article. It primarily includes studies from Nano Letters and Nature. The chart below illustrates the number of referenced publications per year.
Refrences used by this article by year
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| Origin of the Double Polarization Mechanism in Aluminum-Oxide-passivated Quasi-free-standing Epitaxial Graphene on 6H-SiC(0001) | ACS Applied Electronic Materials |
| 2024 | |
| Selective nano-buckling improves the performance of graphene logic transistors | National Science Review |
| 2024 | |
Ultrathin Van der Waals Lanthanum Oxychloride Dielectric for 2D Field‐Effect Transistors | Advanced Materials |
| 1 | 2023 |
| Significantly improved high k dielectric performance: Rare earth oxide as a passivation layer laminated with TiO2 film | Journal of Rare Earths |
| 3 | 2023 |
| Graphene-based field-effect transistor using gated highest-k ferroelectric thin film | Solid State Communications |
| 2023 |
Citations Analysis
The category
Technology: Chemical technology 91
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Sub-100 nm Channel Length Graphene Transistors and was published in 2010. The most recent citation comes from a 2024 study titled Origin of the Double Polarization Mechanism in Aluminum-Oxide-passivated Quasi-free-standing Epitaxial Graphene on 6H-SiC(0001). This article reached its peak citation in 2012, with 25 citations. It has been cited in 77 different journals, 14% of which are open access. Among related journals, the ACS Nano cited this research the most, with 10 citations. The chart below illustrates the annual citation trends for this article.