High-Responsivity Solar-Blind Photodetectors Formed by Ga2O3/p-GaN Bipolar Heterojunctions
Article Properties
-
LanguageEnglish
-
DOI (url)
-
Publication Date2022/02/17
-
Journal
-
Indian UGC (journal)
-
Refrences37
-
Citations22
-
Ping-Feng Chi Renewable Energy and Applied Photonics lab, Department of Photonics, National Cheng Kung University, Tainan city 70101, Taiwan
-
Feng-Wu Lin Renewable Energy and Applied Photonics lab, Department of Photonics, National Cheng Kung University, Tainan city 70101, Taiwan
-
Ming-Lun Lee Department of Electro-Optical Engineering, Southern Taiwan University of Science and Technology, Tainan city 71001, Taiwan
-
Jinn-Kong Sheu Renewable Energy and Applied Photonics lab, Department of Photonics, National Cheng Kung University, Tainan city 70101, Taiwan ORCID
Cite
Chi, Ping-Feng, et al. “High-Responsivity Solar-Blind Photodetectors Formed by Ga2O3 P-GaN Bipolar Heterojunctions”. ACS Photonics, vol. 9, no. 3, 2022, pp. 1002-7, https://doi.org/10.1021/acsphotonics.1c01892.
Chi, P.-F., Lin, F.-W., Lee, M.-L., & Sheu, J.-K. (2022). High-Responsivity Solar-Blind Photodetectors Formed by Ga2O3/p-GaN Bipolar Heterojunctions. ACS Photonics, 9(3), 1002-1007. https://doi.org/10.1021/acsphotonics.1c01892
Chi PF, Lin FW, Lee ML, Sheu JK. High-Responsivity Solar-Blind Photodetectors Formed by Ga2O3/p-GaN Bipolar Heterojunctions. ACS Photonics. 2022;9(3):1002-7.
Journal Categories
Science
Chemistry
Science
Physics
Science
Physics
Acoustics
Sound
Science
Physics
Optics
Light
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing | Applied Physics Letters |
| 201 | 2009 |
| 10.1039/C8RA00523K | ||||
| 10.1364/OME.5.001240 | ||||
| 10.1364/OME.8.002918 | ||||
| 10.1364/OME.9.001191 |
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| Oxygen vacancies modulating performance for Ga2O3 solar-blind photodetectors via low-cost mist chemical vapor deposition | Materials Today Communications | 2024 | ||
| Magnetron sputtering of liquid metals to quickly fabricate gallium-based nano electronic and semiconducting films | Surfaces and Interfaces |
| 2024 | |
| Prediction of the Structural, Mechanical, and Physical Properties of GaC: As a Potential Third-Generation Semiconductor Material | Inorganic Chemistry |
| 2024 | |
Self-powered deep ultraviolet photodetector based on p-CuI/n-ZnGa2O4 heterojunction with high sensitivity and fast speed | Optics Express |
| 2024 | |
Deep-ultraviolet n-ZnGa2O4/p-GaN heterojunction photodetector fabricated by pulsed laser deposition | Optics Letters |
| 2024 |
Citations Analysis
The category
Technology: Chemical technology 17
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Impact of deposition temperature on crystalline quality, oxygen vacancy, defect modulations and hetero-interfacial properties of RF sputtered deposited Ga2O3 thin films on Si substrate and was published in 2022. The most recent citation comes from a 2024 study titled Prediction of the Structural, Mechanical, and Physical Properties of GaC: As a Potential Third-Generation Semiconductor Material. This article reached its peak citation in 2023, with 11 citations. It has been cited in 20 different journals, 10% of which are open access. Among related journals, the Applied Surface Science cited this research the most, with 2 citations. The chart below illustrates the annual citation trends for this article.