X-ray Detectors Based on Ga2O3 Microwires
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date2023/06/30
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Journal
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Indian UGC (journal)
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Refrences49
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Citations2
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Chongyang Zhang Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
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Wenjie Dou Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
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Xun Yang Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
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Huaping Zang Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
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Yancheng Chen Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
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Wei Fan Science and Technology on Plasma Physics Laboratory, Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China
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Shaoyi Wang Science and Technology on Plasma Physics Laboratory, Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China
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Weimin Zhou Science and Technology on Plasma Physics Laboratory, Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China
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Xuexia Chen Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, ChinaSchool of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China
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Chongxin Shan Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
Abstract
Cite
Zhang, Chongyang, et al. “X-Ray Detectors Based on Ga2O3 Microwires”. Materials, vol. 16, no. 13, 2023, p. 4742, https://doi.org/10.3390/ma16134742.
Zhang, C., Dou, W., Yang, X., Zang, H., Chen, Y., Fan, W., Wang, S., Zhou, W., Chen, X., & Shan, C. (2023). X-ray Detectors Based on Ga2O3 Microwires. Materials, 16(13), 4742. https://doi.org/10.3390/ma16134742
Zhang C, Dou W, Yang X, Zang H, Chen Y, Fan W, et al. X-ray Detectors Based on Ga2O3 Microwires. Materials. 2023;16(13):4742.
Journal Categories
Science
Chemistry
Science
Chemistry
Physical and theoretical chemistry
Science
Physics
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
Technology
Mining engineering
Metallurgy
Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| Patterned Ga2O3 nanowires synthesized by CVD method for High-performance self-powered ultraviolet photodetector | Journal of Alloys and Compounds |
| 9 | 2023 |
| High-performance fully transparent Ga2O3 solar-blind UV photodetector with the embedded indium–tin–oxide electrodes | Materials Today Physics |
| 19 | 2023 |
Enhanced gain and detectivity of unipolar barrier solar blind avalanche photodetector via lattice and band engineering | Nature Communications |
| 83 | 2023 |
| Orthorhombic undoped κ-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors | 2023 | |||
| Fabrication of nanocrystalline Ga2O3-NiO heterojunctions for large-area low-dose X-ray imaging | Applied Surface Science |
| 3 | 2022 |
Refrences Analysis
The category
Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials 66
is the most frequently represented among the references in this article. It primarily includes studies from Advanced Optical Materials The chart below illustrates the number of referenced publications per year.
Refrences used by this article by year
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
Structural and Photoelectronic Properties of κ-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates | Materials |
| 1 | 2024 |
Wide-Bandgap Semiconductors for Radiation Detection: A Review | Materials |
| 2024 |
Citations Analysis
The category
Science: Chemistry: Physical and theoretical chemistry 2
is the most commonly referenced area in studies that cite this article.