High-Performance X-ray Detector Based on Single-Crystal β-Ga2O3:Mg

Article Properties
  • Language
    English
  • Publication Date
    2021/01/09
  • Indian UGC (journal)
  • Refrences
    52
  • Citations
    33
  • Jiawen Chen Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, P. R. China
  • Huili Tang Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, P. R. China
  • Bo Liu Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, P. R. China ORCID
  • Zhichao Zhu Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, P. R. China
  • Mu Gu Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, P. R. China ORCID
  • Zengxing Zhang State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, P. R. China ORCID
  • Qiang Xu Department of Nuclear Science and Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China ORCID
  • Jun Xu Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092, P. R. China
  • Leidang Zhou School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China
  • Liang Chen Northwest Institute of Nuclear Technology, Xi’an 710024, P. R. China
  • Xiaoping Ouyang Northwest Institute of Nuclear Technology, Xi’an 710024, P. R. China
Cite
Chen, Jiawen, et al. “High-Performance X-Ray Detector Based on Single-Crystal β-Ga2O3:Mg”. ACS Applied Materials &Amp; Interfaces, vol. 13, no. 2, 2021, pp. 2879-86, https://doi.org/10.1021/acsami.0c20574.
Chen, J., Tang, H., Liu, B., Zhu, Z., Gu, M., Zhang, Z., Xu, Q., Xu, J., Zhou, L., Chen, L., & Ouyang, X. (2021). High-Performance X-ray Detector Based on Single-Crystal β-Ga2O3:Mg. ACS Applied Materials &Amp; Interfaces, 13(2), 2879-2886. https://doi.org/10.1021/acsami.0c20574
Chen J, Tang H, Liu B, Zhu Z, Gu M, Zhang Z, et al. High-Performance X-ray Detector Based on Single-Crystal β-Ga2O3:Mg. ACS Applied Materials & Interfaces. 2021;13(2):2879-86.
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Impact of electron irradiation on semi-insulating and conductive β-Ga2O3 single crystals

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Citations Analysis
The category Science: Physics 24 is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Band Gap Engineering in β-Ga2O3 for a High-Performance X-ray Detector and was published in 2021. The most recent citation comes from a 2024 study titled Pyroelectric Photoconductive Diode for Highly Sensitive and Fast DUV Detection. This article reached its peak citation in 2023, with 13 citations. It has been cited in 23 different journals, 8% of which are open access. Among related journals, the IEEE Photonics Technology Letters cited this research the most, with 3 citations. The chart below illustrates the annual citation trends for this article.
Citations used this article by year