Titel	Veröffentlichungsdatum	Sprache	Zitate
Charge accumulation and mobility in thin dielectric MOS transistors	1982/09/01	English	209
Junctionless Nanowire Transistor (JNT): Properties and design guidelines	2011/11/01	English	204
Interface states in MOS structures with 20–40 Å thick SiO2 films on nondegenerate Si	1972/02/01	English	203
Specific contact resistance using a circular transmission line model	1980/05/01	English	201
Control of Schottky barrier height using highly doped surface layers	1976/06/01	English	200
Minority carrier recombination in heavily-doped silicon	1983/06/01	English	197
Characterization of interface states at Ni/nCdF2 Schottky barrier type diodes and the effect of CdF2 surface preparation	1985/03/01	English	194
Fine structure of heat flow path in semiconductor devices: A measurement and identification method	1988/09/01	English	193
Fundamental limitations in microelectronics—I. MOS technology	1972/07/01	English	190
Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices	2007/04/01	English	190
Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's	1987/09/01	English	189
Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopy	1980/01/01	English	187
Carrier transport across metal-semiconductor barriers	1970/06/01	English	187
Theory of life time measurements with the scanning electron microscope: Steady state	1976/06/01	English	187
Rapid zinc diffusion in gallium arsenide	1962/05/01	English	185
Interface states in SiSiO2 interfaces	1972/05/01	English	184
Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate	1984/08/01	English	181
High field transport in GaAs, InP and InAs	1984/04/01	English	177
The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon	1977/07/01	English	177
Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes	2010/10/01	English	174
Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level	1981/09/01	English	170
Tunneling of electrons from Si into thermally grown SiO2	1977/01/01	English	169
A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions	1994/03/01	English	169
Ammonia gas sensing behavior of graphene surface decorated with gold nanoparticles	2012/12/01	English	168
Interfaces and defects of high-K oxides on silicon	2005/03/01	English	168
Gallium antimonide device related properties	1993/06/01	English	167
Detailed analysis of thin phosphorus-diffused layers in p-type silicon	1961/03/01	English	166
Thermoelectricity and thermoelectric power generation	1968/09/01	English	165
Effect of junction curvature on breakdown voltage in semiconductors	1966/09/01	English	164
Metal-semiconductor contacts for GaAs bulk effect devices	1967/05/01	English	163