Titel	Veröffentlichungsdatum	Sprache	Zitate
nGepGaAs Heterojunctions	1966/11/01	English	162
Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing	1996/01/01	English	160
Analysis of a proposed bistable injection laser	1964/10/01	English	160
Interface states in abrupt semiconductor heterojunctions	1964/02/01	English	158
Alloy scattering and high field transport in ternary and quaternary III–V semiconductors	1978/01/01	English	153
Threshold energy effect on avalanche breakdown voltage in semiconductor junctions	1975/02/01	English	153
CdTe solar cells and photovoltaic heterojunctions in II–VI compounds	1963/05/01	English	152
Ultraviolet photoconductive detector with high visible rejection and fast photoresponse based on ZnO thin film	2007/05/01	English	151
Theory of tunneling into interface states	1970/11/01	English	149
Controllable design of solid-state perovskite solar cells by SCAPS device simulation	2016/12/01	English	147
An accurate numerical steady-state one-dimensional solution of the P-N junction	1968/01/01	English	147
Surface and interface depletion corrections to free carrier-density determinations by hall measurements	1979/07/01	English	147
Use of a Schottky barrier to measure impact ionization coefficients in semiconductors	1973/03/01	English	147
A physical model for the dependence of carrier lifetime on doping density in nondegenerate silicon	1982/08/01	English	144
Calculation of avalanche breakdown voltages of silicon p-n junctions	1967/01/01	English	143
Ohmic contacts to III–V compound semiconductors: A review of fabrication techniques	1983/03/01	English	142
Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary condition	1993/03/01	English	141
Metal-silicon Schottky barriers	1968/03/01	English	140
Intermetallic formation in gold-aluminum systems	1970/10/01	English	139
Carrier recombination and lifetime in highly doped silicon	1983/06/01	English	139
An analysis on the ambipolar current in Si double-gate tunnel FETs	2012/04/01	English	138
Control of relative etch rates of SiO2 and Si in plasma etching	1975/12/01	English	138
Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric	2007/11/01	English	137
AC performance of nanoelectronics: towards a ballistic THz nanotube transistor	2004/10/01	English	136
Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization	2009/11/01	English	135
Theoretical analysis of the series resistance of a solar cell	1967/08/01	English	133
Impurity centers in PN junctions determined from shifts in the thermally stimulated current and capacitance response with heating rate	1972/01/01	English	133
Carrier transport near the Si/SiO2 interface of a MOSFET	1989/10/01	English	132
Electrical characteristics of GaAs MIS Schottky diodes	1979/07/01	English	131
Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors	2010/12/01	English	131