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Solid-State Electronics
Titel
Veröffentlichungsdatum
Sprache
Zitate
Study of Cu contamination during copper integration for subquarter micron technology
1999/06/01
English
An optical technique to measure the bulk lifetime and the surface recombination velocity in silicon samples based on a laser diode probe system
1998/06/01
English
Charge transport mechanisms in HgMnTe photodiodes with ion etched p–n junctions
2000/07/01
English
Base contact resistance limits to lateral scaling of fully self-aligned double mesa SiGe-HBTs
1997/08/01
English
Kinetic Monte Carlo simulation of the nucleation stage of the self-organized growth of quantum dots
1998/07/01
English
Improving the characteristics of an inverted HEMT by inserting an InAs layer into the InGaAs channel
1995/05/01
English
Two-dimensional analytical models of the carrier distribution in the on-state of the IGBT
1995/10/01
English
Measurement and modeling of the anomalous dynamic response of high resistivity diodes at cryogenic temperatures
1997/08/01
English
Suppression of hot-carrier-induced degradation in n-mosfets at low temperatures by N2O-nitridation of gate oxide
1998/04/01
English
Progress towards ultra-wideband AlGaN/GaN MMICs
1999/08/01
English
Anomalous excitation intensity dependence of photoluminescence from InAs self-assembled quantum dots
1998/07/01
English
Proportional difference operator method and its application in studying subthreshold behavior of MOSFETs
2000/06/01
English
A semi-empirical simulation model for polycrystalline thin film transistors
1999/11/01
English
High power applications for GaN-based devices
1997/10/01
English
Multiband quantum transport with Γ–X valley-mixing via evanescent states
1998/07/01
English
Physics based analytic model for C–V characteristics of GaAs planar Schottky diodes
1998/03/01
English
Electrical characterization of anodically grown native oxide on GaInSb
1998/06/01
English
Evaluation of transport properties of ozonized poly/mono interfaces in polysilicon emitter bipolar transistors
2000/06/01
English
CO-implantation of Si and Be in SI GaAs for improved device performance
1998/11/01
English
Four-electron quantum dots in magnetic fields
1999/12/01
English
Design and verification of a hybrid electrostatic discharge model for Gate-Controlled silicon controlled rectifier
2023/11/01
English
Optimization of HIL-HTL-free naphthalimide: Isoquinoline TEOLEDs with BZO top electrode
2023/11/01
English
Efficient circuit simulation of a memristive crossbar array with synaptic weight variability
2023/11/01
English
Spin-orbit torque magnetic tunnel junction based on 2-D materials: Impact of bias-layer on device performance
2023/10/01
English
Simulation of BioGFET sensors using TCAD
2023/10/01
English
A novel robust SCR with high holding voltage for on-chip ESD protection of industry-level bus
2023/10/01
English
Experimental study of MISHEMT from 450 K down to 200 K for analog applications
2023/10/01
English
Random Telegraph Noise and Bias Temperature Instabilities statistical characterization of Ω-gate FDSOI devices at low voltages
2023/11/01
English
Ultrathin four-quadrant silicon photodiodes for beam position and monitor applications: Characterization and radiation effects
2023/11/01
English
A simple fabrication method of passive-matrix organic light-emitting diode display without a photolithography process
2023/10/01
English
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