Solid-State Electronics

Titel Veröffentlichungsdatum Sprache Zitate
Study of Cu contamination during copper integration for subquarter micron technology1999/06/01English
An optical technique to measure the bulk lifetime and the surface recombination velocity in silicon samples based on a laser diode probe system1998/06/01English
Charge transport mechanisms in HgMnTe photodiodes with ion etched p–n junctions2000/07/01English
Base contact resistance limits to lateral scaling of fully self-aligned double mesa SiGe-HBTs1997/08/01English
Kinetic Monte Carlo simulation of the nucleation stage of the self-organized growth of quantum dots1998/07/01English
Improving the characteristics of an inverted HEMT by inserting an InAs layer into the InGaAs channel1995/05/01English
Two-dimensional analytical models of the carrier distribution in the on-state of the IGBT1995/10/01English
Measurement and modeling of the anomalous dynamic response of high resistivity diodes at cryogenic temperatures1997/08/01English
Suppression of hot-carrier-induced degradation in n-mosfets at low temperatures by N2O-nitridation of gate oxide1998/04/01English
Progress towards ultra-wideband AlGaN/GaN MMICs1999/08/01English
Anomalous excitation intensity dependence of photoluminescence from InAs self-assembled quantum dots1998/07/01English
Proportional difference operator method and its application in studying subthreshold behavior of MOSFETs2000/06/01English
A semi-empirical simulation model for polycrystalline thin film transistors1999/11/01English
High power applications for GaN-based devices1997/10/01English
Multiband quantum transport with Γ–X valley-mixing via evanescent states1998/07/01English
Physics based analytic model for C–V characteristics of GaAs planar Schottky diodes1998/03/01English
Electrical characterization of anodically grown native oxide on GaInSb1998/06/01English
Evaluation of transport properties of ozonized poly/mono interfaces in polysilicon emitter bipolar transistors2000/06/01English
CO-implantation of Si and Be in SI GaAs for improved device performance1998/11/01English
Four-electron quantum dots in magnetic fields1999/12/01English
Design and verification of a hybrid electrostatic discharge model for Gate-Controlled silicon controlled rectifier2023/11/01English
Optimization of HIL-HTL-free naphthalimide: Isoquinoline TEOLEDs with BZO top electrode2023/11/01English
Efficient circuit simulation of a memristive crossbar array with synaptic weight variability2023/11/01English
Spin-orbit torque magnetic tunnel junction based on 2-D materials: Impact of bias-layer on device performance2023/10/01English
Simulation of BioGFET sensors using TCAD2023/10/01English
A novel robust SCR with high holding voltage for on-chip ESD protection of industry-level bus2023/10/01English
Experimental study of MISHEMT from 450 K down to 200 K for analog applications2023/10/01English
Random Telegraph Noise and Bias Temperature Instabilities statistical characterization of Ω-gate FDSOI devices at low voltages2023/11/01English
Ultrathin four-quadrant silicon photodiodes for beam position and monitor applications: Characterization and radiation effects2023/11/01English
A simple fabrication method of passive-matrix organic light-emitting diode display without a photolithography process2023/10/01English