A charge-sheet model of the MOSFET | 1978/02/01 | English | 322 |
Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers | 1969/02/01 | English | 318 |
Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions | 1966/08/01 | English | 312 |
Low frequency noise in MOS transistors—I Theory | 1968/09/01 | English | 304 |
The Richardson constant for thermionic emission in Schottky barrier diodes | 1965/04/01 | English | 302 |
Recombination enhanced defect reactions | 1978/11/01 | English | 301 |
Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. Theory | 1974/06/01 | English | 299 |
A unified mobility model for device simulation—II. Temperature dependence of carrier mobility and lifetime | 1992/07/01 | English | 296 |
Current transport in metal-semiconductor-metal (MSM) structures | 1971/12/01 | English | 292 |
Compound tellurides and their alloys for peltier cooling—A review | 1972/10/01 | English | 292 |
Complementary tunneling transistor for low power application | 2004/12/01 | English | 286 |
Deep Level Transient Fourier Spectroscopy (DLTFS)—A technique for the analysis of deep level properties | 1988/12/01 | English | 279 |
Electron and hole ionization rates in epitaxial silicon at high electric fields | 1973/10/01 | English | 270 |
Reaction of thin metal films with SiO2 substrates | 1978/04/01 | English | 260 |
Antimonide-based compound semiconductors for electronic devices: A review | 2005/12/01 | English | 247 |
A review of the theory and technology for ohmic contacts to group III–V compound semiconductors | 1975/06/01 | English | 244 |
Reverse current-voltage characteristics of metal-silicide Schottky diodes | 1970/07/01 | English | 241 |
Approximations for Fermi-Dirac integrals, especially the function used to describe electron density in a semiconductor | 1982/11/01 | English | 239 |
Specific contact resistance of metal-semiconductor barriers | 1971/07/01 | English | 238 |
A simple theory to predict the threshold voltage of short-channel IGFET's | 1974/10/01 | English | 238 |
Properties of gold in silicon | 1966/02/01 | English | 234 |
A comparative study of extraction methods for solar cell model parameters | 1986/03/01 | English | 231 |
Effective mass and intrinsic concentration in silicon | 1967/11/01 | English | 230 |
An investigation of steady-state velocity overshoot in silicon | 1985/04/01 | English | 228 |
Hot electrons and phonons under high intensity photoexcitation of semiconductors | 1978/01/01 | English | 226 |
Zur berechnung des tunnelstroms durch eine trapezförmige potentialstufe | 1966/10/01 | English | 225 |
Switching phenomena in titanium oxide thin films | 1968/05/01 | English | 216 |
BiSb alloys for magneto-thermoelectric and thermomagnetic cooling | 1972/10/01 | English | 212 |
Phase change memories: State-of-the-art, challenges and perspectives | 2006/01/01 | English | 211 |
The preparation of thin layers of Ge and Si by chemical hydrogen plasma transport | 1968/07/01 | English | 211 |