Solid-State Electronics

Titel Veröffentlichungsdatum Sprache Zitate
A charge-sheet model of the MOSFET1978/02/01English322
Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers1969/02/01English318
Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions1966/08/01English312
Low frequency noise in MOS transistors—I Theory1968/09/01English304
The Richardson constant for thermionic emission in Schottky barrier diodes1965/04/01English302
Recombination enhanced defect reactions1978/11/01English301
Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. Theory1974/06/01English299
A unified mobility model for device simulation—II. Temperature dependence of carrier mobility and lifetime1992/07/01English296
Current transport in metal-semiconductor-metal (MSM) structures1971/12/01English292
Compound tellurides and their alloys for peltier cooling—A review1972/10/01English292
Complementary tunneling transistor for low power application2004/12/01English286
Deep Level Transient Fourier Spectroscopy (DLTFS)—A technique for the analysis of deep level properties1988/12/01English279
Electron and hole ionization rates in epitaxial silicon at high electric fields1973/10/01English270
Reaction of thin metal films with SiO2 substrates1978/04/01English260
Antimonide-based compound semiconductors for electronic devices: A review2005/12/01English247
A review of the theory and technology for ohmic contacts to group III–V compound semiconductors1975/06/01English244
Reverse current-voltage characteristics of metal-silicide Schottky diodes1970/07/01English241
Approximations for Fermi-Dirac integrals, especially the function used to describe electron density in a semiconductor1982/11/01English239
Specific contact resistance of metal-semiconductor barriers1971/07/01English238
A simple theory to predict the threshold voltage of short-channel IGFET's1974/10/01English238
Properties of gold in silicon1966/02/01English234
A comparative study of extraction methods for solar cell model parameters1986/03/01English231
Effective mass and intrinsic concentration in silicon1967/11/01English230
An investigation of steady-state velocity overshoot in silicon1985/04/01English228
Hot electrons and phonons under high intensity photoexcitation of semiconductors1978/01/01English226
Zur berechnung des tunnelstroms durch eine trapezförmige potentialstufe1966/10/01English225
Switching phenomena in titanium oxide thin films1968/05/01English216
BiSb alloys for magneto-thermoelectric and thermomagnetic cooling1972/10/01English212
Phase change memories: State-of-the-art, challenges and perspectives2006/01/01English211
The preparation of thin layers of Ge and Si by chemical hydrogen plasma transport1968/07/01English211