An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes | 1962/09/01 | English | 1,155 |
Field and thermionic-field emission in Schottky barriers | 1966/07/01 | English | 1,057 |
Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review | 1996/10/01 | English | 1,035 |
Experiments on Ge-GaAs heterojunctions | 1962/09/01 | English | 809 |
Models for contacts to planar devices | 1972/02/01 | English | 744 |
A review of some charge transport properties of silicon | 1977/02/01 | English | 723 |
Problems related to p-n junctions in silicon | 1961/01/01 | English | 634 |
A single-frequency approximation for interface-state density determination | 1980/09/01 | English | 615 |
A unified mobility model for device simulation—I. Model equations and concentration dependence | 1992/07/01 | English | 555 |
Some aspects of semiconducting barium titanate | 1964/12/01 | English | 543 |
Current transport in metal-semiconductor barriers | 1966/11/01 | English | 543 |
Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K | 1968/06/01 | English | 542 |
Multiple-gate SOI MOSFETs | 2004/06/01 | English | 535 |
On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers | 1986/06/01 | English | 509 |
Preparation, characteristics and photovoltaic properties of cuprous oxide—a review | 1986/01/01 | English | 506 |
Measurements of bandgap narrowing in Si bipolar transistors | 1976/10/01 | English | 480 |
Measurement of the ionization rates in diffused silicon p-n junctions | 1970/05/01 | English | 460 |
Micropower energy harvesting | 2009/07/01 | English | 458 |
A quasi-static technique for MOS C-V and surface state measurements | 1970/06/01 | English | 443 |
Electron tunneling and contact resistance of metal-silicon contact barriers | 1970/02/01 | English | 415 |
Bariumtitanat als sperrschichthalbleiter | 1961/07/01 | English | 409 |
Switching properties of thin Nio films | 1964/11/01 | English | 382 |
Solar cell fill factors: General graph and empirical expressions | 1981/08/01 | English | 381 |
Ohmic contacts for GaAs devices | 1967/12/01 | English | 374 |
Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors | 1966/10/01 | English | 365 |
The effects of contact size and non-zero metal resistance on the determination of specific contact resistance | 1982/02/01 | English | 362 |
Metal-semiconductor surface barriers | 1966/11/01 | English | 353 |
A review of emerging non-volatile memory (NVM) technologies and applications | 2016/11/01 | English | 331 |
Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures | 1965/02/01 | English | 325 |
Performance estimation of junctionless multigate transistors | 2010/02/01 | English | 322 |