Solid-State Electronics

Titel Veröffentlichungsdatum Sprache Zitate
An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes1962/09/01English1,155
Field and thermionic-field emission in Schottky barriers1966/07/01English1,057
Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review1996/10/01English1,035
Experiments on Ge-GaAs heterojunctions1962/09/01English809
Models for contacts to planar devices1972/02/01English744
A review of some charge transport properties of silicon1977/02/01English723
Problems related to p-n junctions in silicon1961/01/01English634
A single-frequency approximation for interface-state density determination1980/09/01English615
A unified mobility model for device simulation—I. Model equations and concentration dependence1992/07/01English555
Some aspects of semiconducting barium titanate1964/12/01English543
Current transport in metal-semiconductor barriers1966/11/01English543
Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K1968/06/01English542
Multiple-gate SOI MOSFETs2004/06/01English535
On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers1986/06/01English509
Preparation, characteristics and photovoltaic properties of cuprous oxide—a review1986/01/01English506
Measurements of bandgap narrowing in Si bipolar transistors1976/10/01English480
Measurement of the ionization rates in diffused silicon p-n junctions1970/05/01English460
Micropower energy harvesting2009/07/01English458
A quasi-static technique for MOS C-V and surface state measurements1970/06/01English443
Electron tunneling and contact resistance of metal-silicon contact barriers1970/02/01English415
Bariumtitanat als sperrschichthalbleiter1961/07/01English409
Switching properties of thin Nio films1964/11/01English382
Solar cell fill factors: General graph and empirical expressions1981/08/01English381
Ohmic contacts for GaAs devices1967/12/01English374
Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors1966/10/01English365
The effects of contact size and non-zero metal resistance on the determination of specific contact resistance1982/02/01English362
Metal-semiconductor surface barriers1966/11/01English353
A review of emerging non-volatile memory (NVM) technologies and applications2016/11/01English331
Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures1965/02/01English325
Performance estimation of junctionless multigate transistors2010/02/01English322