Temperature dependence of contact resistance of Au−Ti−Pd2Si−n+-Si ohmic contacts
Article Properties
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DOI (url)
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Publication Date2010/12/30
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Indian UGC (journal)
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Refrences7
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Citations8
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A. Ye. Belyaev
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Cite
Belyaev, A. Ye. “Temperature Dependence of Contact Resistance of Au−Ti−Pd2Si−n+-Si Ohmic Contacts”. Semiconductor Physics, Quantum Electronics and Optoelectronics, vol. 13, no. 4, 2010, pp. 436-8, https://doi.org/10.15407/spqeo13.04.436.
Belyaev, A. Y. (2010). Temperature dependence of contact resistance of Au−Ti−Pd2Si−n+-Si ohmic contacts. Semiconductor Physics, Quantum Electronics and Optoelectronics, 13(4), 436-438. https://doi.org/10.15407/spqeo13.04.436
Belyaev AY. Temperature dependence of contact resistance of Au−Ti−Pd2Si−n+-Si ohmic contacts. Semiconductor Physics, Quantum Electronics and Optoelectronics. 2010;13(4):436-8.
Journal Category
Science
Physics
Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
Electronic states and atomic structure at the Pd2Si–Si interface | Journal of Vacuum Science and Technology | 48 | 1981 | |
| 10.1134/S1063782608110134 | ||||
| 10.1134/S1063782607110012 | ||||
| Peculiarities in the mechanism of current flow through an ohmic contact to gallium phosphide | Technical Physics Letters |
| 18 | 2004 |
| 7. V.M. Ievlev, S.B. Kushev, A.V. Bugakov, S.A. Soldatenko, B.N. Markushev, I.G. Rudneva, Conjugation regularities and substructure of interphase boundaries in the Si−Me silicide systems (Me: Pt, Pd, Ni, Re, Ir, Mo, Ti) // Proc. ISFTE-12, Kharkov, Ukraine, 2002, p. 201-206. |
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n+–n-Si Diffusion Silicon Structures | Semiconductors |
| 2019 | |
| Application of nanostructured silver film in multilayer contact system of Ti/Mo/Ag silicon photoconverters | Radioelectronics and Communications Systems | 2016 | ||
| Current flow through metal shunts in ohmic contacts to n +-Si | Semiconductors |
| 2014 | |
| On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n + -n doping step | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| 2 | 2014 |
| The mechanism of contact-resistance formation on lapped n-Si surfaces | Semiconductors |
| 2013 |
Citations Analysis
The category
Science: Physics 7
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si and was published in 2012. The most recent citation comes from a 2019 study titled Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n+–n-Si Diffusion Silicon Structures. This article reached its peak citation in 2014, with 2 citations. It has been cited in 4 different journals, 25% of which are open access. Among related journals, the Semiconductors cited this research the most, with 4 citations. The chart below illustrates the annual citation trends for this article.