The mechanism of contact-resistance formation on lapped n-Si surfaces

Article Properties
  • Language
    English
  • DOI (url)
    10.1134/s1063782613030238
  • Publication Date
    2013/03/01
  • Journal
    Semiconductors
  • Indian UGC (journal)
  • Refrences
    28
  • A. V. Sachenko
  • A. E. Belyaev
  • N. S. Boltovets
  • A. O. Vinogradov
  • L. M. Kapitanchuk
  • R. V. Konakova
  • V. P. Kostylyov
  • Ya. Ya. Kudryk
  • V. P. Kladko
  • V. N. Sheremet
Cite
Sachenko, A. V., et al. “The Mechanism of Contact-Resistance Formation on Lapped N-Si Surfaces”. Semiconductors, vol. 47, no. 3, 2013, pp. 449-54, https://doi.org/10.1134/s1063782613030238.
Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Vinogradov, A. O., Kapitanchuk, L. M., Konakova, R. V., Kostylyov, V. P., Kudryk, Y. Y., Kladko, V. P., & Sheremet, V. N. (2013). The mechanism of contact-resistance formation on lapped n-Si surfaces. Semiconductors, 47(3), 449-454. https://doi.org/10.1134/s1063782613030238
Sachenko AV, Belyaev AE, Boltovets NS, Vinogradov AO, Kapitanchuk LM, Konakova RV, et al. The mechanism of contact-resistance formation on lapped n-Si surfaces. Semiconductors. 2013;47(3):449-54.
Journal Categories
Science
Physics
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
Refrences
Title Journal Journal Categories Citations Publication Date
Mechanism of contact resistance formation in ohmic contacts with high dislocation density

 Journal of Applied Physics
  • Science: Chemistry: Physical and theoretical chemistry
  • Science: Physics
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Science: Physics
 24 2012
10.1134/S1063782612030074 Semiconductors
  • Technology: Chemical technology
  • Science: Physics
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Science: Physics
 2012
Temperature dependence of contact resistance of Au−Ti−Pd2Si−n+-Si ohmic contacts Semiconductor Physics, Quantum Electronics and Optoelectronics
  • Science: Physics
  • Science: Physics
 8 2010
10.1134/S1063782609090115 Semiconductors
  • Technology: Chemical technology
  • Science: Physics
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Science: Physics
 2009
10.1134/S1063782608110134 Semiconductors
  • Technology: Chemical technology
  • Science: Physics
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Science: Physics
 2008
Refrences Analysis
Category Category Repetition
Science: Physics22
Technology: Chemical technology15
Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials10
Science: Chemistry: Physical and theoretical chemistry1
The category Science: Physics 22 is the most frequently represented among the references in this article. It primarily includes studies from Semiconductors The chart below illustrates the number of referenced publications per year.
Refrences used by this article by year