Electronic states and atomic structure at the Pd2Si–Si interface
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date1981/04/01
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Indian UGC (journal)
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Citations48
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P. E. Schmid IBM Watson Research Center, Yorktown Heights, New York 10598
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P. S. Ho IBM Watson Research Center, Yorktown Heights, New York 10598
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H. Föll IBM Watson Research Center, Yorktown Heights, New York 10598
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G. W. Rubloff IBM Watson Research Center, Yorktown Heights, New York 10598
Abstract
Cite
Schmid, P. E., et al. “Electronic States and Atomic Structure at the Pd2Si–Si Interface”. Journal of Vacuum Science and Technology, vol. 18, no. 3, 1981, pp. 937-43, https://doi.org/10.1116/1.570960.
Schmid, P. E., Ho, P. S., Föll, H., & Rubloff, G. W. (1981). Electronic states and atomic structure at the Pd2Si–Si interface. Journal of Vacuum Science and Technology, 18(3), 937-943. https://doi.org/10.1116/1.570960
Schmid PE, Ho PS, Föll H, Rubloff GW. Electronic states and atomic structure at the Pd2Si–Si interface. Journal of Vacuum Science and Technology. 1981;18(3):937-43.
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
Structural and morphological properties of contacts to a (111) orientation monosilicon substrate based on aluminum with a Ti and w – 10 % Ti barrier layer | Yugra State University Bulletin | 2022 | ||
| Interfacial Silicide Formation and Stress Evolution during Sputter Deposition of Ultrathin Pd Layers on a-Si | ACS Applied Materials & Interfaces |
| 5 | 2019 |
| Temperature dependence of contact resistance for Au-Ti-Pd2Si-n +-Si ohmic contacts subjected to microwave irradiation | Semiconductors |
| 2012 | |
| Rhodium and silicon system: I. Glassy metallic alloy formation | Nanotechnology |
| 6 | 2010 |
| Temperature dependence of contact resistance of Au−Ti−Pd2Si−n+-Si ohmic contacts | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| 8 | 2010 |
Citations Analysis
The category
Science: Physics 27
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled An X-Ray Study of Domain Structure and Stress in Pd2Si Films at Pd-Si Interfaces and was published in 1981. The most recent citation comes from a 2022 study titled Structural and morphological properties of contacts to a (111) orientation monosilicon substrate based on aluminum with a Ti and w – 10 % Ti barrier layer. This article reached its peak citation in 1982, with 11 citations. It has been cited in 22 different journals, 4% of which are open access. Among related journals, the Physical Review B cited this research the most, with 8 citations. The chart below illustrates the annual citation trends for this article.