Si and GaAs 0.5μm-gate Schottky-barrier field-effect transistors

Article Properties
  • Language
    English
  • DOI (url)
    10.1049/el:19730168
  • Publication Date
    1973/05/17
  • Journal
    Electronics Letters
  • Indian UGC (journal)
  • Refrences
    6
  • Citations
    27
  • W. Baechtold
  • K. Daetwyler
  • T. Forster
  • T.O. Mohr
  • W. Walter
  • P. Wolf
Cite
Baechtold, W., et al. “Si and GaAs 0.5μm-Gate Schottky-Barrier Field-Effect Transistors”. Electronics Letters, vol. 9, no. 10, 1973, pp. 232-4, https://doi.org/10.1049/el:19730168.
Baechtold, W., Daetwyler, K., Forster, T., Mohr, T., Walter, W., & Wolf, P. (1973). Si and GaAs 0.5μm-gate Schottky-barrier field-effect transistors. Electronics Letters, 9(10), 232-234. https://doi.org/10.1049/el:19730168
Baechtold W, Daetwyler K, Forster T, Mohr T, Walter W, Wolf P. Si and GaAs 0.5μm-gate Schottky-barrier field-effect transistors. Electronics Letters. 1973;9(10):232-4.
Journal Categories
Technology
Electrical engineering
Electronics
Nuclear engineering
Technology
Electrical engineering
Electronics
Nuclear engineering
Electric apparatus and materials
Electric circuits
Electric networks
Technology
Electrical engineering
Electronics
Nuclear engineering
Electronics
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Refrences
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Citations
Title Journal Journal Categories Citations Publication Date
Two-dimensional materials and their prospects in transistor electronics Nanoscale
  • Science: Chemistry: General. Including alchemy
  • Technology: Chemical technology
  • Science: Chemistry
  • Science: Physics
  • Technology: Chemical technology
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials
  • Science: Physics
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Lattice-gas cellular-automaton method for semiclassical transport in semiconductors Physical Review B 1992
The Historical Development of GaAs FET Digital IC Technology IEEE Transactions on Microwave Theory and Techniques
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics
  • Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks
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A Long-Wavelength Optical Receiver Using a Short-Channel Si-MOSFET The Bell System Technical Journal 4 1983
The effects of deep levels in GaAs MESFETs Physica B+C 5 1983
Citations Analysis
Category Category Repetition
Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks19
Technology: Electrical engineering. Electronics. Nuclear engineering: Electronics17
Science: Physics11
Technology: Chemical technology11
Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials8
Technology: Engineering (General). Civil engineering (General)4
Science: Chemistry: Physical and theoretical chemistry2
Science: Physics: Optics. Light2
Science: Chemistry: General. Including alchemy1
Science: Chemistry1
Technology: Electrical engineering. Electronics. Nuclear engineering: Nuclear engineering. Atomic power1
Technology: Electrical engineering. Electronics. Nuclear engineering1
Technology: Engineering (General). Civil engineering (General): Applied optics. Photonics1
Science: Physics: Acoustics. Sound1
The category Technology: Electrical engineering. Electronics. Nuclear engineering: Electric apparatus and materials. Electric circuits. Electric networks 19 is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Input Amplifiers for Optical PCM Receivers and was published in 1974. The most recent citation comes from a 2015 study titled Two-dimensional materials and their prospects in transistor electronics. This article reached its peak citation in 1974, with 5 citations. It has been cited in 13 different journals. Among related journals, the IEEE Transactions on Microwave Theory and Techniques cited this research the most, with 8 citations. The chart below illustrates the annual citation trends for this article.
Citations used this article by year