Two-dimensional materials and their prospects in transistor electronics
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date2015/01/01
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Journal
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Indian UGC (journal)
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Refrences228
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Citations15
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F. Schwierz
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J. Pezoldt
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R. Granzner
Cite
Schwierz, F., et al. “Two-Dimensional Materials and Their Prospects in Transistor Electronics”. Nanoscale, vol. 7, no. 18, 2015, pp. 8261-83, https://doi.org/10.1039/c5nr01052g.
Schwierz, F., Pezoldt, J., & Granzner, R. (2015). Two-dimensional materials and their prospects in transistor electronics. Nanoscale, 7(18), 8261-8283. https://doi.org/10.1039/c5nr01052g
Schwierz F, Pezoldt J, Granzner R. Two-dimensional materials and their prospects in transistor electronics. Nanoscale. 2015;7(18):8261-83.
Journal Categories
Science
Chemistry
Science
Chemistry
General
Including alchemy
Science
Physics
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| Large Area Growth and Electrical Properties of p-Type WSe2 Atomic Layers | Nano Letters |
| 361 | 2015 |
| Pressure-Dependent Optical and Vibrational Properties of Monolayer Molybdenum Disulfide | Nano Letters |
| 267 | 2015 |
| Flexible Black Phosphorus Ambipolar Transistors, Circuits and AM Demodulator | Nano Letters |
| 363 | 2015 |
| Silicene field-effect transistors operating at room temperature | Nature Nanotechnology |
| 1,281 | 2015 |
| 10.1109/JEDS.2014.2363789 | 2015 |
Refrences Analysis
The category
Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials 164
is the most frequently represented among the references in this article. It primarily includes studies from Nano Letters The chart below illustrates the number of referenced publications per year.
Refrences used by this article by year
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
Predicting two-dimensional semiconductors using conductivity effective mass | Physical Chemistry Chemical Physics |
| 2024 | |
| Characteristic analysis of the MoS2/SiO2 interface field-effect transistor with varying MoS2 layers | Journal of Materials Science: Materials in Electronics |
| 2 | 2023 |
| 3 nm Channel MoS2 Transistors by Electromigration of Metal Interconnection | ACS Applied Electronic Materials |
| 1 | 2023 |
| Phonon Hydrodynamic Transport: Observation of Thermal Wave-Like Flow and Second Sound Propagation in Graphene at 100 K | ACS Omega |
| 2 | 2023 |
Empirical model for bandgaps of armchair graphene nanoribbons | AIP Advances |
| 2023 |
Citations Analysis
The category
Science: Chemistry 12
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Impact of edge roughness on the electron transport properties of MoS2 ribbons and was published in 2018. The most recent citation comes from a 2024 study titled Predicting two-dimensional semiconductors using conductivity effective mass. This article reached its peak citation in 2023, with 4 citations. It has been cited in 10 different journals, 20% of which are open access. Among related journals, the AIP Advances cited this research the most, with 4 citations. The chart below illustrates the annual citation trends for this article.