| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| 10.1109/T-ED.1982.20789 | IEEE Transactions on Electron Devices |
| 1982 | |
| Below 20 ps/gate operation with GaAs SAINT FETs at room temperature | Electronics Letters |
| 3 | 1982 |
| Silicon implanted super low-noise GaAs MESFET | Electronics Letters |
| 17 | 1982 |
| 10.1109/T-ED.1981.20447 | IEEE Transactions on Electron Devices |
| 1981 | |
| 10.1109/EDL.1980.25310 | IEEE Electron Device Letters |
| 1980 |
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| Effect of doping on the forward current-transport mechanisms in a metal–insulator–semiconductor contact to InP:Zn grown by metal organic vapor phase epitaxy | Solid-State Electronics |
| 1998 | |
| Surface passivation of GaAs MESFETs | IEEE Transactions on Electron Devices |
| 10 | 1997 |
| Origins and characterization of low-frequency noise in GaAs MESFET's grown on InP substrates | IEEE Transactions on Electron Devices |
| 8 | 1996 |
| Numerical analysis of frequency dispersion of transconductance in GaAs MESFETs | IEEE Transactions on Electron Devices |
| 10 | 1996 |
| Surface influence on the conductance DLTS spectra of GaAs MESFET's | IEEE Transactions on Electron Devices |
| 1986 |