Interband Transitions in Si Quantum Wires grown in {100} plane
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date2000/01/01
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Journal
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Indian UGC (journal)
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Refrences7
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X. Zianni
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A.G. Nassiopoulou
Abstract
Cite
Zianni, X., and A.G. Nassiopoulou. “Interband Transitions in Si Quantum Wires Grown in {100} Plane”. MRS Online Proceedings Library, vol. 638, 2000, https://doi.org/10.1557/proc-638-f14.20.1.
Zianni, X., & Nassiopoulou, A. (2000). Interband Transitions in Si Quantum Wires grown in {100} plane. MRS Online Proceedings Library, 638. https://doi.org/10.1557/proc-638-f14.20.1
Zianni X, Nassiopoulou A. Interband Transitions in Si Quantum Wires grown in {100} plane. MRS Online Proceedings Library. 2000;638.
Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| 10.1103/PhysRevLett.48.413 | ||||
| 10.1016/S0080-8784(08)62345-5 | ||||
| 10.1103/PhysRevB.62.5109 | ||||
| 10.1002/(SICI)1521-396X(199812)170:2<377::AID-PSSA377>3.0.CO;2-7 | ||||
| Conditions for a direct band gap in Si quantum wires | Superlattices and Microstructures |
| 14 | 1998 |