Particle contamination formation in magnetron sputtering processes

Article Properties
  • Language
    English
  • DOI (url)
  • Publication Date
    1997/07/01
  • Indian UGC (Journal)
  • Citations
    26
  • Gary S. Selwyn Physics Division, M/S E526, Los Alamos National Laboratory, Los Alamos, New Mexico 87545
  • Corey A. Weiss Materials Research Corporation, 200 Route 303, North Congers, New York 10920
  • Federico Sequeda Seagate Peripherals Disk Division, 311 Turquoise Street, Milpitas, California 95035
  • Carrie Huang Seagate Peripherals Disk Division, 311 Turquoise Street, Milpitas, California 95035
Abstract
Cite
Selwyn, Gary S., et al. “Particle Contamination Formation in Magnetron Sputtering Processes”. Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films, vol. 15, no. 4, 1997, pp. 2023-8, https://doi.org/10.1116/1.580674.
Selwyn, G. S., Weiss, C. A., Sequeda, F., & Huang, C. (1997). Particle contamination formation in magnetron sputtering processes. Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films, 15(4), 2023-2028. https://doi.org/10.1116/1.580674
Selwyn GS, Weiss CA, Sequeda F, Huang C. Particle contamination formation in magnetron sputtering processes. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 1997;15(4):2023-8.
Journal Categories
Science
Physics
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
Description

Are particulates sabotaging your thin films? This study investigates the mechanisms behind particle contamination during magnetron sputtering, a process crucial for thin film fabrication. Using laser light scattering, researchers monitored particles greater than 0.3 μm on the target, substrate, and in the plasma, revealing distinct mechanisms for particle generation, transport, and trapping compared to plasma etch processes. One key source of particle contamination is linked to target surface areas with weaker plasma density, where film redeposition promotes filament or nodule growth. Sputter removal of these features is inhibited by sputter yield dependence on incidence angle, leading to plasma particle trapping and increased filament growth. These growths can short-circuit the sheath, causing mechanical failure, fracture, and ejection of target contaminants. Observed in both semiconductor fabrication and storage disk manufacturing, this mechanism may be universal to many sputter processes. These insights pave the way for strategies to minimize particle contamination and improve the quality of thin films in various applications.

Published in the Journal of Vacuum Science & Technology A, this article aligns with the journal's scope on vacuum processes and thin film deposition. The research offers insight into particle formation mechanisms during magnetron sputtering. The paper enriches the journal’s content in plasma physics and materials science.

Citations
Citations Analysis
The first research to cite this article was titled Quantitative measurement of nodule formation in W–Ti sputtering and was published in 1998. The most recent citation comes from a 2024 study titled Quantitative measurement of nodule formation in W–Ti sputtering . This article reached its peak citation in 2023 , with 4 citations.It has been cited in 19 different journals, 5% of which are open access. Among related journals, the Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films cited this research the most, with 5 citations. The chart below illustrates the annual citation trends for this article.
Citations used this article by year