Concerned about particle reduction during sputtering? This study presents a quantitative measurement of nodule formation in **W–Ti sputtering**, a process used in creating diffusion barriers for integrated circuits. The research investigates the influence of target properties and sputtering parameters on nodule formation, particularly in tungsten targets with 10 and 15 wt% titanium. The amount and lifespan of the nodules were assessed as a function of target life. A parabolic relationship is found, indicating a saturated nodule size with increased sputtering life. The presence of fractured nodules confirms that these are a source of particulates. This research provides insight into fundamental nodule formation during sputtering. The results provide essential knowledge for controlling nodule formation, a key step in reducing particle contamination during sputtering processes. This knowledge can be used to optimize target design and sputtering parameters, leading to improved microfabrication processes and more reliable integrated circuits.
Published in the Journal of Vacuum Science & Technology A, this research aligns with the journal's emphasis on vacuum processes and thin-film technology. By examining nodule formation during sputtering, it contributes directly to the understanding and optimization of a critical technique used in materials science and microelectronics.