Band gap narrowing of titanium dioxide by sulfur doping

Article Properties
  • Language
    English
  • DOI (url)
  • Publication Date
    2002/07/15
  • Indian UGC (Journal)
  • Refrences
    27
  • Citations
    1,220
  • T. Umebayashi Department of Quantum Engineering and Systems Science, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • T. Yamaki Department of Materials Development, Takasaki Radiation Chemistry Research Establishment, Japan and Atomic Energy Research Institute (JAERI), 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
  • H. Itoh Department of Materials Development, Takasaki Radiation Chemistry Research Establishment, Japan and Atomic Energy Research Institute (JAERI), 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
  • K. Asai Department of Quantum Engineering and Systems Science, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Abstract
Cite
Umebayashi, T., et al. “Band Gap Narrowing of Titanium Dioxide by Sulfur Doping”. Applied Physics Letters, vol. 81, no. 3, 2002, pp. 454-6, https://doi.org/10.1063/1.1493647.
Umebayashi, T., Yamaki, T., Itoh, H., & Asai, K. (2002). Band gap narrowing of titanium dioxide by sulfur doping. Applied Physics Letters, 81(3), 454-456. https://doi.org/10.1063/1.1493647
Umebayashi T, Yamaki T, Itoh H, Asai K. Band gap narrowing of titanium dioxide by sulfur doping. Applied Physics Letters. 2002;81(3):454-6.
Journal Categories
Science
Chemistry
Physical and theoretical chemistry
Science
Physics
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
Description

Can tweaking the composition of materials alter their light absorption properties? This research explores how doping titanium dioxide with sulfur affects its band gap, revealing insights for advanced solar energy applications. This paper reports the synthesis of sulfur-doped titanium dioxide (TiO2) through oxidation annealing of titanium disulfide (TiS2). The resulting TiO2 exhibits a narrowed band gap, with S atoms occupying O-atom sites and forming Ti–S bonds. Theoretical analyses confirm that mixing of S 3p states with the valence band contributes to this band gap narrowing. The band gap narrowing of titanium dioxide has implications for lower-energy region absorption. It also opens up the possibility of other applications in solar technology.

Published in _Applied Physics Letters_, this research is highly relevant due to the journal’s emphasis on experimental physics and its applications in materials science. The study's findings regarding sulfur doping and band gap narrowing contribute to the understanding of semiconductor properties and their potential for technological advancements.

Refrences
Refrences Analysis
The category Science: Physics 26 is the most frequently represented among the references in this article. It primarily includes studies from Surface Science The chart below illustrates the number of referenced publications per year.
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Citations
Citations Analysis
The first research to cite this article was titled The Effect of Nitrogen Ion Implantation on the Photoactivity of TiO2 Rutile Single Crystals and was published in 2003. The most recent citation comes from a 2024 study titled The Effect of Nitrogen Ion Implantation on the Photoactivity of TiO2 Rutile Single Crystals . This article reached its peak citation in 2009 , with 100 citations.It has been cited in 336 different journals, 11% of which are open access. Among related journals, the The Journal of Physical Chemistry C cited this research the most, with 89 citations. The chart below illustrates the annual citation trends for this article.
Citations used this article by year