Detailed Balance Limit of Efficiency of p-n Junction Solar Cells

Article Properties
  • Language
    English
  • DOI (url)
  • Publication Date
    1961/03/01
  • Indian UGC (Journal)
  • Refrences
    47
  • Citations
    8,894
  • William Shockley Shockley Transistor, Unit of Clevite Transistor, Palo Alto, California
  • Hans J. Queisser Shockley Transistor, Unit of Clevite Transistor, Palo Alto, California
Abstract
Cite
Shockley, William, and Hans J. Queisser. “Detailed Balance Limit of Efficiency of P-N Junction Solar Cells”. Journal of Applied Physics, vol. 32, no. 3, 1961, pp. 510-9, https://doi.org/10.1063/1.1736034.
Shockley, W., & Queisser, H. J. (1961). Detailed Balance Limit of Efficiency of p-n Junction Solar Cells. Journal of Applied Physics, 32(3), 510-519. https://doi.org/10.1063/1.1736034
Shockley W, Queisser HJ. Detailed Balance Limit of Efficiency of p-n Junction Solar Cells. Journal of Applied Physics. 1961;32(3):510-9.
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Chemistry
Physical and theoretical chemistry
Science
Physics
Technology
Chemical technology
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Materials of engineering and construction
Mechanics of materials
Refrences
Refrences Analysis
The category Science: Physics 16 is the most frequently represented among the references in this article. It primarily includes studies from Journal of Applied Physics The chart below illustrates the number of referenced publications per year.
Refrences used by this article by year
Citations
Citations Analysis
The first research to cite this article was titled Slip Patterns on Boron-Doped Silicon Surfaces and was published in 1961. The most recent citation comes from a 2024 study titled Slip Patterns on Boron-Doped Silicon Surfaces . This article reached its peak citation in 2022 , with 902 citations.It has been cited in 837 different journals, 16% of which are open access. Among related journals, the Journal of Applied Physics cited this research the most, with 282 citations. The chart below illustrates the annual citation trends for this article.
Citations used this article by year