Can a novel spectroscopic technique enhance our understanding of material properties at terahertz frequencies? The magneto-optical Kerr spectroscopy in the frequency range from 0.5 to 2.5 THz, which employs reflection geometry, enabling high-frequency noncontact Hall measurements in opaque samples. The developed technique employs reflection geometry, enabling high-frequency noncontact Hall measurements in opaque samples. A method to reveal the off-diagonal component of the complex dielectric tensor from the measured polarization-dependent THz waveforms is also presented. At a static magnetic field of 0.48 T, a large Kerr rotation over 10° originating from magnetoplasma resonance is observed in an n-type undoped InAs wafer at room temperature. The result indicates the strong potential of InAs for polarization modulation in the THz regime. The strong potential of this material for the polarization modulator in the THz regime is indicated. This technique contributes to high-frequency characterization.
This research published in Applied Physics Letters uses terahertz magneto-optical Kerr spectroscopy to study indium arsenide (InAs). The journal focuses on the applications of physics, fitting in well with the journal's scope and scientific community.