What causes performance-limiting defects in InGaAsN semiconductors? This study investigates deep-level defects in Indium Gallium Arsenide Nitride (InGaAsN) semiconductors grown using molecular-beam epitaxy (MBE). These defects can significantly impact the material's electrical and optical properties, affecting device performance. Using Deep-Level Transient Spectroscopy (DLTS), the researchers characterized both p-type and n-type InGaAsN samples. They identified several majority-carrier and minority-carrier traps, which indicate the presence of energy levels within the band gap caused by structural imperfections or impurities. The study revealed that the DLTS peaks were broad, suggesting continuous defect distributions or closely spaced energy levels. Comparing these results with previous studies on InGaAsN grown by metalorganic chemical vapor deposition (MOCVD) revealed both similarities and differences. This suggests that some defects are intrinsic, while others are specific to the growth technique used, impacting future material optimization strategies.
Published in Applied Physics Letters, this article aligns with the journal's focus on rapid dissemination of significant findings in applied physics. By characterizing deep-level defects in InGaAsN, the research provides valuable insights for optimizing semiconductor growth techniques and improving the performance of electronic devices, thus meeting the journal's criteria for timely and impactful research.