IEEE Electron Device Letters

Title Publication Date Language Citations
Observation of near-interface oxide traps with the charge-pumping technique1992/12/0184
1.1 kV 4H-SiC power UMOSFETs1997/12/0183
MBE-grown Si/SiGe HBTs with high beta , f/sub T/, and f/sub max/1992/04/0183
Terahertz detector utilizing two-dimensional electronic fluid1998/10/0183
2.6 kV 4H-SiC lateral DMOSFETs1998/04/0182
Low-temperature single-crystal Si TFTs fabricated on Si films processed via sequential lateral solidification1998/08/0182
High-mobility modulation-doped SiGe-channel p-MOSFETs1991/08/0181
105-GHz bandwidth metal-semiconductor-metal photodiode1988/10/0181
Self-consistent model of minority-carrier lifetime, diffusion length, and mobility1991/08/0181
The effect of hydrogen on trap generation, positive charge trapping, and time-dependent dielectric breakdown of gate oxides1988/06/0180
14.6% efficient thin-film cadmium telluride heterojunction solar cells1992/05/0180
Improved InAlAs/InGaAs HEMT characteristics by inserting an InAs layer into the InGaAs channel1992/06/0180
Novel fingerprint scanning arrays using polysilicon TFT's on glass and polymer substrates1997/01/0179
Sub-60-nm quasi-planar FinFETs fabricated using a simplified process2001/10/0179
Furnace nitridation of thermal SiO/sub 2/ in pure N/sub 2/O ambient for ULSI MOS applications1992/02/0178
Determination of interface trap capture cross sections using three-level charge pumping1990/08/0178
High-frequency performance of diamond field-effect transistor2001/08/0178
Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafers1992/02/0177
Implanted silicon JFET on completely depleted high-resistivity devices1989/02/0177
High-temperature thin-film diamond field-effect transistor fabricated using a selective growth method1991/02/0177
Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric2001/05/0176
Dramatic improvement of hot-electron-induced interface degradation in MOS structures containing F or Cl in SiO/sub 2/1988/01/0176
Emitter size effect on current gain in fully self-aligned AlGaAs/GaAs HBT's with AlGaAs surface passivation layer1990/09/0175
Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 GHz1997/09/0175
Impact ionization in GaAs MESFETs1990/03/0175
Multilevel metal capacitance models for CAD design synthesis systems1992/01/0175
Amorphous silicon thin-film transistors on compliant polyimide foil substrates1999/09/0174
Parameter extraction of accurate and scaleable substrate resistance components in RF MOSFETs2002/04/0174
Kinetics of copper drift in PECVD dielectrics1996/12/0173
High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor1998/02/0173