IEEE Electron Device Letters

Title Publication Date Language Citations
An analytical expression for Fermi level versus sheet carrier concentration for HEMT modeling1988/03/0172
Current-source a-Si:H thin-film transistor circuit for active-matrix organic light-emitting displays2000/12/0172
The voltage-doping transformation: a new approach to the modeling of MOSFET short-channel effects1988/03/0171
Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging2001/02/0171
p-type Ge-channel MODFETs with high transconductance grown on Si substrates1993/04/0171
High-performance Si/SiGe n-type modulation-doped transistors1993/07/0170
High voltage 4H-SiC Schottky barrier diodes1995/06/0170
Hole mobility enhancement in MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructure inversion layers1992/01/0170
A novel approach for introducing the electron-electron and electron-impurity interactions in particle-based simulations1999/09/0170
Multilevel-spiral inductors using VLSI interconnect technology1996/09/0169
Amorphous silicon thin-film transistors on steel foil substrates1996/12/0169
Ti-Si-N diffusion barriers between silicon and copper1994/08/0169
Hot-electron hardened Si-gate MOSFET utilizing F implantation1989/04/0169
Fast temperature programmed sensing for micro-hotplate gas sensors1995/06/0168
Interface trap-enhanced gate-induced leakage current in MOSFET1989/05/0168
MOS transistors with stacked SiO/sub 2/-Ta/sub 2/O/sub 5/-SiO/sub 2/ gate dielectrics for giga-scale integration of CMOS technologies1998/11/0168
Effects of longitudinal grain boundaries on the performance of MILC-TFTs1999/02/0168
Organic smart pixels and complementary inverter circuits formed on plastic substrates by casting and rubber stamping2000/03/0167
Thin-oxide damage from gate charging during plasma processing1992/05/0167
Thin oxide charging current during plasma etching of aluminum1991/08/0166
Modeling of 10-nm-scale ballistic MOSFET's2000/05/0166
A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices1991/05/0166
Explanation and model for the logarithmic time dependence of p-MOSFET degradation1991/05/0166
Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors1994/01/0166
Anomalous turn-on voltage degradation during hot-carrier stress in polycrystalline silicon thin-film transistors2001/02/0166
Inkjet printed copper source/drain metallization for amorphous silicon thin-film transistors2000/08/0165
Novel N/sub 2/O-oxynitridation technology for forming highly reliable EEPROM tunnel oxide films1991/11/0165
Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability1997/03/0165
MOS characteristics of ultrathin SiO/sub 2/ prepared by oxidizing Si in N/sub 2/O1991/08/0165
Influence of line dimensions on the resistance of Cu interconnections1998/12/0165