IEEE Electron Device Letters

Title Publication Date Language Citations
Stress-induced oxide leakage1991/11/01104
Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectric2000/11/01103
Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE1990/12/01100
Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates2001/07/01100
Mechanism of device degradation in n- and p-channel polysilicon TFTs by electrical stressing1990/04/0199
Nanoscale CMOS spacer FinFET for the terabit era2002/01/0199
Tunable infrared modulator and switch using Stark shift in step quantum wells1990/05/0198
Silicon-carbide high-voltage (400 V) Schottky barrier diodes1992/10/0198
1800 V NPN bipolar junction transistors in 4H-SiC2001/03/0197
DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates1998/02/0197
Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs2001/11/0196
Measured microwave power performance of AlGaN/GaN MODFET1996/09/0196
AlGaN/GaN heterojunction bipolar transistor1999/06/0196
CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz1996/12/0194
High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level1988/09/0193
Electromigration characteristics of copper interconnects1993/05/0192
Microwave performance of AlInAs-GaInAs HEMTs with 0.2- and 0.1- mu m gate length1988/12/0191
On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit?2001/02/0190
Yttrium oxide/silicon dioxide: a new dielectric structure for VLSI/ULSI circuits1988/04/0189
Transistor characteristics with Ta/sub 2/O/sub 5/ gate dielectric1998/11/0189
High-power 10-GHz operation of AlGaN HFET's on insulating SiC1998/06/0188
Effects of trap-state density reduction by plasma hydrogenation in low-temperature polysilicon TFT1989/03/0188
Diamond surface-channel FET structure with 200 V breakdown voltage1997/11/0187
High-transconductance n-type Si/SiGe modulation-doped field-effect transistors1992/05/0186
Microwave performance of AlGaN/GaN inverted MODFET's1997/06/0186
An experimentally validated analytical model for gate line-edge roughness (LER) effects on technology scaling2001/06/0186
Avalanche-induced effects in polysilicon thin-film transistors1991/05/0185
Temperature dependence of threshold voltage in thin-film SOI MOSFETs1990/08/0185
Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layers1988/02/0184
Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (11 2 0) face2002/01/0184