IEEE Transactions on Electron Devices

Titel Veröffentlichungsdatum Sprache Zitate
SiC devices: physics and numerical simulation1994/06/01318
Status and prospects for SiC power MOSFETs2002/04/01317
Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation1994/05/01316
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries2001/03/01304
Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's1994/01/01303
Room-temperature single-electron memory1994/01/01302
Optimized antireflection coatings for high-efficiency silicon solar cells1991/01/01299
Silicon carbide high-power devices1996/01/01297
Carrier lifetimes in silicon1997/01/01293
Dual-material gate (DMG) field effect transistor1999/05/01284
Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation1989/07/01283
A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon1989/09/01282
Making silicon nitride film a viable gate dielectric1998/03/01273
Heterojunction bipolar transistors using Si-Ge alloys1989/01/01273
Undoped AlGaN/GaN HEMTs for microwave power amplification2001/03/01272
Polysilicon TFT technology for active matrix OLED displays2001/05/01271
Nonlithographic nano-wire arrays: fabrication, physics, and device applications1996/01/01261
Threshold voltage model for deep-submicrometer MOSFETs1993/01/01258
High-performance bottom electrode organic thin-film transistors2001/06/01257
Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate2001/01/01254
Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs1988/01/01251
Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/1991/01/01245
Negative capacitance effect in semiconductor devices1998/01/01245
Achieving full-color organic light-emitting devices for lightweight, flat-panel displays1997/01/01244
50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors1992/01/01242
Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides1988/01/01240
Trends in power semiconductor devices1996/01/01237
High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon film1989/01/01237
Fabrication and analysis of deep submicron strained-Si n-MOSFET's2000/07/01234
Plasma wave electronics: novel terahertz devices using two dimensional electron fluid1996/01/01232