IEEE Transactions on Electron Devices

Titel Veröffentlichungsdatum Sprache Zitate
Field-emitter arrays for vacuum microelectronics1991/01/01230
Electrical characteristics of ferroelectric PZT thin films for DRAM applications1992/01/01227
Pentacene organic thin-film transistors for circuit and display applications1999/06/01226
Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]2001/07/01225
Numerical modeling of textured silicon solar cells using PC-1D1990/01/01225
1.5 nm direct-tunneling gate oxide Si MOSFET's1996/01/01219
Development and electrical properties of undoped polycrystalline silicon thin-film transistors1989/09/01212
Closed-form expressions for interconnection delay, coupling, and crosstalk in VLSIs1993/01/01209
A single-transistor silicon synapse1996/01/01208
Vacuum microelectronics: what's new and exciting1991/01/01204
Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits1995/03/01203
Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI1995/05/01200
High-field-induced degradation in ultra-thin SiO/sub 2/ films1988/01/01198
Charge-trap memory device fabricated by oxidation of Si/sub 1-x/Ge/sub x/2001/04/01198
The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs1999/07/01198
Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs2001/01/01196
Soft breakdown of ultra-thin gate oxide layers1996/01/01196
1/f noise in MOS devices, mobility or number fluctuations?1994/01/01195
Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling2001/07/01191
Dependence of thin-oxide films quality on surface microroughness1992/03/01191
On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation1994/01/01191
Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processing1989/01/01189
Modeling statistical dopant fluctuations in MOS transistors1998/01/01187
A functional MOS transistor featuring gate-level weighted sum and threshold operations1992/06/01187
Modeling and characterization of gate oxide reliability1988/01/01185
SiGe-channel heterojunction p-MOSFET's1994/01/01183
On the bremsstrahlung origin of hot-carrier-induced photons in silicon devices1993/03/01180
Measurement and modeling of self-heating in SOI nMOSFET's1994/01/01179
Wide bandgap semiconductor materials and devices1996/01/01175
Efficient organic electroluminescent devices using single-layer doped polymer thin films with bipolar carrier transport abilities1997/01/01168