Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga2O3Rectifiers
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date2019/01/01
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Indian UGC (journal)
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Refrences59
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Citations37
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Jiancheng Yang
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Chaker Fares ORCID (unauthenticated)
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Randy Elhassani
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Minghan Xian
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Fan Ren ORCID (unauthenticated)
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S. J. Pearton ORCID (unauthenticated)
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Marko Tadjer ORCID (unauthenticated)
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Akito Kuramata
Journal Categories
Science
Chemistry
Science
Physics
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| 10.1149/MA2018-01/23/1420 | ||||
| How Much Will Gallium Oxide Power Electronics Cost? | Joule |
| 90 | 2019 |
| 10.1109/IEDM.2018.8614693 | ||||
| Perspective—Opportunities and Future Directions for Ga2O3 | ECS Journal of Solid State Science and Technology |
| 330 | 2017 |
| Guest Editorial: The dawn of gallium oxide microelectronics | Applied Physics Letters |
| 446 | 2018 |
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
A high-breakdown-voltage β-Ga2O3 nanoFET with a beveled field-plate structure | Journal of Materials Chemistry C |
| 2024 | |
| Vertical Vertical β-Ga₂O₃ Power Diodes: From Interface Engineering to Edge Termination | IEEE Transactions on Electron Devices |
| 2024 | |
| Development of β-Ga<sub>2</sub>O<sub>3</sub> MOSSBD Featuring Ampere-Class Forward Current and Medium Breakdown Voltage | IEEJ Transactions on Electronics, Information and Systems | 2024 | ||
A Review of β-Ga2O3 Power Diodes | Materials |
| 2024 | |
8.7 A/700 V β-Ga2O3 Schottky barrier diode demonstrated by oxygen annealing combined with self-aligned mesa termination | Applied Physics Express |
| 2024 |
Citations Analysis
The category
Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials 25
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga2O3 Schottky Diodes and was published in 2019. The most recent citation comes from a 2024 study titled A Review of β-Ga2O3 Power Diodes. This article reached its peak citation in 2023, with 12 citations. It has been cited in 20 different journals, 20% of which are open access. Among related journals, the ECS Journal of Solid State Science and Technology cited this research the most, with 4 citations. The chart below illustrates the annual citation trends for this article.