Guest Editorial: The dawn of gallium oxide microelectronics
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date2018/02/05
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Journal
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Indian UGC (journal)
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Refrences71
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Citations446
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Masataka Higashiwaki National Institute of Information and Communications Technology 1 , Koganei, Tokyo 184–8795, Japan
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Gregg H. Jessen Air Force Research Laboratory, Wright-Patterson Air Force Base 2 , Dayton, Ohio 45433, USA
Journal Categories
Science
Chemistry
Physical and theoretical chemistry
Science
Physics
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
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Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
Ab initio velocity-field curves in monoclinic β-Ga2O3 | Journal of Applied Physics |
| 103 | 2017 |
Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor | Applied Physics Letters |
| 231 | 2017 |
β-Ga2O3 on insulator field-effect transistors with drain currents exceeding 1.5 A/mm and their self-heating effect | Applied Physics Letters |
| 154 | 2017 |
Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition | Applied Physics Letters |
| 121 | 2017 |
High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge | Applied Physics Letters |
| 67 | 2017 |
Refrences Analysis
The category
Science: Physics 91
is the most frequently represented among the references in this article. It primarily includes studies from Applied Physics Letters and Applied Physics Express. The chart below illustrates the number of referenced publications per year.
Refrences used by this article by year
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| Influencing the morphological stability of MOVPE-grown β-Ga2O3 films by O2/Ga ratio | Applied Surface Science |
| 2024 | |
| Electron-irradiation induced unconventional phase transition of β-Ga2O3 epitaxial single-crystal thin film observed by in-situ TEM | Journal of Materials Research and Technology |
| 2024 | |
| How do the oxygen vacancies affect the photoexcited carriers dynamics in β-Ga2O3？ | Materials Today Physics |
| 1 | 2024 |
| First-principles study on the magnetism, carrier activity, and carrier lifetime of Ga2O3: Li or Na or K with different valence Ga vacancies and H interstitial | Vacuum |
| 2024 | |
| Modifying the Barrier Height of β-Ga2O3 Schottky Contacts Using Covalently Grafted Organic Layers | ACS Applied Electronic Materials |
| 2024 |
Citations Analysis
The category
Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials 318
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Quantitative subcompound-mediated reaction model for the molecular beam epitaxy of III-VI and IV-VI thin films: Applied to
Ga2O3
,
In2O3
, and
SnO2 and was published in 2018. The most recent citation comes from a 2024 study titled Performance Modulation of Printed Two-Dimensional GaOx Film Transistor Upon Annealing Treatment. This article reached its peak citation in 2020, with 87 citations. It has been cited in 111 different journals, 17% of which are open access. Among related journals, the Applied Physics Letters cited this research the most, with 82 citations. The chart below illustrates the annual citation trends for this article.