Leakage Currents Mechanism in Thin Films of Ferroelectric Hf0.5Zr0.5O2
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date2017/01/11
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Journal
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Indian UGC (journal)
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Citations11
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Damir R. Islamov ORCID (unauthenticated)
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Anna G. Chernikova
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Maxim G. Kozodaev
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Timofey V. Perevalov ORCID (unauthenticated)
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Vladimir A. Gritsenko ORCID (unauthenticated)
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Oleg M. Orlov
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Andrey M. Markeev ORCID (unauthenticated)
Cite
Islamov, Damir R., et al. “Leakage Currents Mechanism in Thin Films of Ferroelectric Hf0.5Zr0.5O2”. ECS Transactions, vol. 75, no. 32, 2017, pp. 123-9, https://doi.org/10.1149/07532.0123ecst.
Islamov, D. R., Chernikova, A. G., Kozodaev, M. G., Perevalov, T. V., Gritsenko, V. A., Orlov, O. M., & Markeev, A. M. (2017). Leakage Currents Mechanism in Thin Films of Ferroelectric Hf0.5Zr0.5O2. ECS Transactions, 75(32), 123-129. https://doi.org/10.1149/07532.0123ecst
Islamov DR, Chernikova AG, Kozodaev MG, Perevalov TV, Gritsenko VA, Orlov OM, et al. Leakage Currents Mechanism in Thin Films of Ferroelectric Hf0.5Zr0.5O2. ECS Transactions. 2017;75(32):123-9.
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
Performance comparison of planar and cylindrical ferroelectric tunnel junctions | Japanese Journal of Applied Physics |
| 2024 | |
| Leakage mechanism in ferroelectric Hf0.5Zr0.5O2 epitaxial thin films | Applied Materials Today |
| 3 | 2023 |
Analytical modeling of architecture dependent atypical scaling trends in metal–Hf0.5Zr0.5O2–metal-SiO2–Si negative capacitance transistors | Semiconductor Science and Technology |
| 2023 | |
Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide | Nano Convergence |
| 4 | 2023 |
| Impact of oxygen content on phase constitution and ferroelectric behavior of hafnium oxide thin films deposited by reactive high-power impulse magnetron sputtering | Acta Materialia |
| 14 | 2022 |
Citations Analysis
The category
Technology: Chemical technology 10
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances and was published in 2018. The most recent citation comes from a 2024 study titled Performance comparison of planar and cylindrical ferroelectric tunnel junctions. This article reached its peak citation in 2023, with 3 citations. It has been cited in 9 different journals, 11% of which are open access. Among related journals, the Acta Materialia cited this research the most, with 2 citations. The chart below illustrates the annual citation trends for this article.