Multilevel-Cell Phase-Change Memory: A Viable Technology
Article Properties
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DOI (url)
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Publication Date2016/03/01
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Indian UGC (journal)
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Refrences26
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Citations4
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Aravinthan Athmanathan
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Milos Stanisavljevic
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Nikolaos Papandreou
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Haralampos Pozidis
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Evangelos Eleftheriou
Cite
Athmanathan, Aravinthan, et al. “Multilevel-Cell Phase-Change Memory: A Viable Technology”. IEEE Journal on Emerging and Selected Topics in Circuits and Systems, vol. 6, no. 1, 2016, pp. 87-100, https://doi.org/10.1109/jetcas.2016.2528598.
Athmanathan, A., Stanisavljevic, M., Papandreou, N., Pozidis, H., & Eleftheriou, E. (2016). Multilevel-Cell Phase-Change Memory: A Viable Technology. IEEE Journal on Emerging and Selected Topics in Circuits and Systems, 6(1), 87-100. https://doi.org/10.1109/jetcas.2016.2528598
Athmanathan, Aravinthan, Milos Stanisavljevic, Nikolaos Papandreou, Haralampos Pozidis, and Evangelos Eleftheriou. “Multilevel-Cell Phase-Change Memory: A Viable Technology”. IEEE Journal on Emerging and Selected Topics in Circuits and Systems 6, no. 1 (2016): 87-100. https://doi.org/10.1109/jetcas.2016.2528598.
Athmanathan A, Stanisavljevic M, Papandreou N, Pozidis H, Eleftheriou E. Multilevel-Cell Phase-Change Memory: A Viable Technology. IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 2016;6(1):87-100.
Journal Categories
Technology
Electrical engineering
Electronics
Nuclear engineering
Electric apparatus and materials
Electric circuits
Electric networks
Technology
Electrical engineering
Electronics
Nuclear engineering
Electronics
Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| Full integration of highly manufacturable 512 mb pram based on 90 nm technology | 2006 | |||
| Solid-state drive requirements and endurance test method | 2011 | |||
| 10.1109/IEDM.2007.4418973 | ||||
| 10.1109/IEDM.2007.4419107 | ||||
| 10.1109/IMW.2012.6213671 |
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| Combined HW/SW Drift and Variability Mitigation for PCM-Based Analog In-Memory Computing for Neural Network Applications | IEEE Journal on Emerging and Selected Topics in Circuits and Systems |
| 2023 | |
Model of a multilayer coating for an artificial optical synapse | Computer Optics |
| 2022 | |
Multilevel HfO2-based RRAM devices for low-power neuromorphic networks | APL Materials |
| 116 | 2019 |
A weak electric field-assisted ultrafast electrical switching dynamics in In3SbTe2 phase-change memory devices | AIP Advances |
| 2 | 2017 |
Citations Analysis
The category
Science: Physics 2
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled A weak electric field-assisted ultrafast electrical switching dynamics in In3SbTe2 phase-change memory devices and was published in 2017. The most recent citation comes from a 2023 study titled Combined HW/SW Drift and Variability Mitigation for PCM-Based Analog In-Memory Computing for Neural Network Applications. This article reached its peak citation in 2023, with 1 citations. It has been cited in 4 different journals, 75% of which are open access. Among related journals, the IEEE Journal on Emerging and Selected Topics in Circuits and Systems cited this research the most, with 1 citations. The chart below illustrates the annual citation trends for this article.