The 2020 UV emitter roadmap
Article Properties
-
DOI (url)
-
Publication Date2020/09/16
-
Indian UGC (journal)
-
Refrences216
-
Citations281
-
Hiroshi Amano
-
Ramón Collazo
-
Carlo De Santi ORCID (unauthenticated)
-
Sven Einfeldt
-
Mitsuru Funato
-
Johannes Glaab ORCID (unauthenticated)
-
Sylvia Hagedorn
-
Akira Hirano
-
Hideki Hirayama
-
Ryota Ishii
-
Yukio Kashima
-
Yoichi Kawakami
-
Ronny Kirste
-
Michael Kneissl
-
Robert Martin ORCID (unauthenticated)
-
Frank Mehnke ORCID (unauthenticated)
-
Matteo Meneghini
-
Abdallah Ougazzaden
-
Peter J Parbrook ORCID (unauthenticated)
-
Siddharth Rajan
-
Pramod Reddy
-
Friedhard Römer
-
Jan Ruschel ORCID (unauthenticated)
-
Biplab Sarkar ORCID (unauthenticated)
-
Ferdinand Scholz
-
Leo J Schowalter ORCID (unauthenticated)
-
Philip Shields ORCID (unauthenticated)
-
Zlatko Sitar
-
Luca Sulmoni ORCID (unauthenticated)
-
Tao Wang
-
Tim Wernicke ORCID (unauthenticated)
-
Markus Weyers
-
Bernd Witzigmann
-
Yuh-Renn Wu ORCID (unauthenticated)
-
Thomas Wunderer
-
Yuewei Zhang ORCID (unauthenticated)
Cite
Amano, Hiroshi, et al. “The 2020 UV Emitter Roadmap”. Journal of Physics D: Applied Physics, vol. 53, no. 50, 2020, p. 503001, https://doi.org/10.1088/1361-6463/aba64c.
Amano, H., Collazo, R., Santi, C. D., Einfeldt, S., Funato, M., Glaab, J., Hagedorn, S., Hirano, A., Hirayama, H., Ishii, R., Kashima, Y., Kawakami, Y., Kirste, R., Kneissl, M., Martin, R., Mehnke, F., Meneghini, M., Ougazzaden, A., Parbrook, P. J., … Zhang, Y. (2020). The 2020 UV emitter roadmap. Journal of Physics D: Applied Physics, 53(50), 503001. https://doi.org/10.1088/1361-6463/aba64c
Amano, Hiroshi, Ramón Collazo, Carlo De Santi, Sven Einfeldt, Mitsuru Funato, Johannes Glaab, Sylvia Hagedorn, et al. “The 2020 UV Emitter Roadmap”. Journal of Physics D: Applied Physics 53, no. 50 (2020): 503001. https://doi.org/10.1088/1361-6463/aba64c.
Amano H, Collazo R, Santi CD, Einfeldt S, Funato M, Glaab J, et al. The 2020 UV emitter roadmap. Journal of Physics D: Applied Physics. 2020;53(50):503001.
Journal Categories
Science
Chemistry
Physical and theoretical chemistry
Science
Physics
Technology
Chemical technology
Technology
Electrical engineering
Electronics
Nuclear engineering
Materials of engineering and construction
Mechanics of materials
You May Also Like
- Polymorphic transitions in single crystals: A new molecular dynamics method
- A comprehensive review of ZnO materials and devices
- Detailed Balance Limit of Efficiency of p-n Junction Solar Cells
- Metal oxide thin film based supercapacitors
- A new era for liquid crystal research: Applications of liquid crystals in soft matter nano-, bio- and microtechnology
Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm | Japanese Journal of Applied Physics |
| 41 | 2019 |
Ultraviolet-B band lasers fabricated on highly relaxed thick Al0.55Ga0.45N films grown on various types of AlN wafers | Japanese Journal of Applied Physics |
| 36 | 2019 |
InAlN-based LEDs emitting in the near-UV region | Japanese Journal of Applied Physics |
| 13 | 2019 |
| (Invited) Polarization-Induced Doping in Graded AlGaN Epilayers Grown on AlN Single Crystal Substrates | ECS Transactions | 26 | 2018 | |
| N- and P- type Doping in Al-rich AlGaN and AlN | ECS Transactions | 16 | 2018 |
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
Long‐Range Atomic Order on Double‐Stepped Al2O3(0001) Surfaces | Advanced Materials |
| 1 | 2024 |
Progress in Performance of AlGaN‐Based Ultraviolet Light Emitting Diodes | Advanced Electronic Materials |
| 2024 | |
Simulation Study of Aluminum Nitride TrenchFETs with Polarization‐Induced Doping | physica status solidi (a) |
| 2024 | |
Homoepitaxial Regrowth of AlGaN on AlGaN Templates Prepared via Chemical Mechanical Polishing and Its Application to UV‐B Laser Diodes | physica status solidi (a) |
| 2024 | |
Analysis of Altered Layers Formed during Substrate Exfoliation of AlGaN Crystals Grown on Periodic AlN Nanopillars Using the Heated‐Pressurized Water Method | physica status solidi (b) |
| 2024 |
Citations Analysis
The category
Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials 213
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Vertical conductivity and Poole–Frenkel-ionization of Mg acceptors in AlGaN short-period superlattices with high Al mole fraction and was published in 2020. The most recent citation comes from a 2024 study titled High performance deep-ultraviolet light-emitting diodes with transverse electron injection. This article reached its peak citation in 2022, with 87 citations. It has been cited in 102 different journals, 13% of which are open access. Among related journals, the Applied Physics Letters cited this research the most, with 26 citations. The chart below illustrates the annual citation trends for this article.