The Schrödinger–Poisson self-consistency in layered quantum semiconductor structures
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date2004/03/15
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Journal
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Indian UGC (journal)
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Refrences50
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Citations27
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L. R. Ram-Mohan Departments of Physics, Electrical and Computer Engineering, Worcester Polytechnic Institute, Worcester, Massachusetts 01609
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K. H. Yoo Department of Physics and Research Institute for Basic Sciences, Kyung Hee University, Seoul, 130-701, Korea
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J. Moussa Department of Physics, Worcester Polytechnic Institute, Worcester, Massachusetts 01609
Abstract
Cite
Ram-Mohan, L. R., et al. “The Schrödinger–Poisson Self-Consistency in Layered Quantum Semiconductor Structures”. Journal of Applied Physics, vol. 95, no. 6, 2004, pp. 3081-92, https://doi.org/10.1063/1.1649458.
Ram-Mohan, L. R., Yoo, K. H., & Moussa, J. (2004). The Schrödinger–Poisson self-consistency in layered quantum semiconductor structures. Journal of Applied Physics, 95(6), 3081-3092. https://doi.org/10.1063/1.1649458
Ram-Mohan LR, Yoo KH, Moussa J. The Schrödinger–Poisson self-consistency in layered quantum semiconductor structures. Journal of Applied Physics. 2004;95(6):3081-92.
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Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
Band parameters for III–V compound semiconductors and their alloys | Journal of Applied Physics |
| 5,390 | 2001 |
| 10.1016/S0026-2692(99)00057-9 | Microelectronics Journal |
| 1999 | |
| Hierarchy of simulation approaches for hot carrier transport in deep submicron devices | Semiconductor Science and Technology |
| 20 | 1998 |
Iteration scheme for the solution of the two-dimensional Schrödinger-Poisson equations in quantum structures | Journal of Applied Physics |
| 175 | 1997 |
| 10.1142/S0218863595000094 | 1995 |
Refrences Analysis
The category
Science: Physics 31
is the most frequently represented among the references in this article. It primarily includes studies from Physical Review and Physical Review B. The chart below illustrates the number of referenced publications per year.
Refrences used by this article by year
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
The cell-centered Finite-Volume self-consistent approach for heterostructures: 1D electron gas at the Si–SiO2 interface | Journal of Physics: Condensed Matter |
| 2023 | |
Band structure and strain distribution of InAs quantum dots encapsulated in (Al)GaAs asymmetric matrixes | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films |
| 2023 | |
Analysis of Improved 2D Electron Gas Mobility in InAlN/AlN/InGaN High‐Electron‐Mobility Transistors with GaN Interlayer | physica status solidi (RRL) – Rapid Research Letters |
| 3 | 2022 |
Gate control of interlayer exchange coupling in ferromagnetic semiconductor trilayers with perpendicular magnetic anisotropy | APL Materials |
| 2022 | |
| The Effects of Temperature and Electric Field on the Electronic and Optical Properties of an InAs Quantum Dot Placed at the Center of a GaAs Nanowire | Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques |
| 2022 |
Citations Analysis
The category
Science: Physics 17
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Spectral Element Method for the Schrödinger-Poisson System and was published in 2004. The most recent citation comes from a 2023 study titled The cell-centered Finite-Volume self-consistent approach for heterostructures: 1D electron gas at the Si–SiO2 interface. This article reached its peak citation in 2022, with 3 citations. It has been cited in 21 different journals, 9% of which are open access. Among related journals, the Physical Review B cited this research the most, with 4 citations. The chart below illustrates the annual citation trends for this article.