Self-assembling GaN quantum dots on AlxGa1−xN surfaces using a surfactant
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date1996/12/23
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Journal
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Indian UGC (journal)
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Citations232
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Satoru Tanaka The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-01, Japan
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Sohachi Iwai The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-01, Japan
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Yoshinobu Aoyagi The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-01, Japan
Abstract
Cite
Tanaka, Satoru, et al. “Self-Assembling GaN Quantum Dots on AlxGa1−xN Surfaces Using a Surfactant”. Applied Physics Letters, vol. 69, no. 26, 1996, pp. 4096-8, https://doi.org/10.1063/1.117830.
Tanaka, S., Iwai, S., & Aoyagi, Y. (1996). Self-assembling GaN quantum dots on AlxGa1−xN surfaces using a surfactant. Applied Physics Letters, 69(26), 4096-4098. https://doi.org/10.1063/1.117830
Tanaka S, Iwai S, Aoyagi Y. Self-assembling GaN quantum dots on AlxGa1−xN surfaces using a surfactant. Applied Physics Letters. 1996;69(26):4096-8.
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Physical and theoretical chemistry
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Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
Confinement of Excitons within GaN 1D Nanoarchitectures Formed on AlN Molecular Steps | Advanced Optical Materials |
| 2024 | |
Sn-assisted heteroepitaxy improves ZnTiN2 photoabsorbers | Journal of Materials Chemistry A |
| 2024 | |
| Plasmonic Plasma Deposition Using Nanostructured Materials on Si Substrates | Vacuum and Surface Science | 2024 | ||
| Acceleration of the yellow band luminescence in GaN layers via Si and Ge doping | Journal of Alloys and Compounds |
| 7 | 2022 |
Desorption induced formation of low-density GaN quantum dots: nanoscale correlation of structural and optical properties | Journal of Physics D: Applied Physics |
| 2022 |
Citations Analysis
The category
Science: Physics 163
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN and was published in 1997. The most recent citation comes from a 2024 study titled Plasmonic Plasma Deposition Using Nanostructured Materials on Si Substrates. This article reached its peak citation in 2003, with 21 citations. It has been cited in 80 different journals, 7% of which are open access. Among related journals, the Applied Physics Letters cited this research the most, with 39 citations. The chart below illustrates the annual citation trends for this article.