Silicon on insulator material technology
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date1995/01/01
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Journal
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Indian UGC (journal)
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Refrences7
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Citations695
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M. Bruel
Cite
Bruel, M. “Silicon on Insulator Material Technology”. Electronics Letters, vol. 31, no. 14, 1995, p. 1201, https://doi.org/10.1049/el:19950805.
Bruel, M. (1995). Silicon on insulator material technology. Electronics Letters, 31(14), 1201. https://doi.org/10.1049/el:19950805
Bruel M. Silicon on insulator material technology. Electronics Letters. 1995;31(14):1201.
Journal Categories
Technology
Electrical engineering
Electronics
Nuclear engineering
Technology
Electrical engineering
Electronics
Nuclear engineering
Electric apparatus and materials
Electric circuits
Electric networks
Technology
Electrical engineering
Electronics
Nuclear engineering
Electronics
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Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| 10.1109/TNS.1971.4326342 | 1971 | |||
| 10.1109/TNS.1971.4326342 | 1983 | |||
| 10.1109/TNS.1971.4326342 | 1983 | |||
| 10.1109/TNS.1971.4326342 | 1990 | |||
| 10.1109/TNS.1971.4326342 | 1992 |
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
Xenon Nanobubbles and Residual Defects in Annealed Xe‐Implanted Si(001): Analysis by the Combination of Advanced Synchrotron X‐Ray Diffraction and Transmission Electron Microscopy Techniques | Advanced Materials Technologies |
| 2024 | |
Morphological Relaxation of Strained Epitaxial Films for Stripe‐Geometry Devices | Advanced Materials Technologies |
| 2024 | |
Hybrid material integration for active photonic applications | APL Photonics |
| 2024 | |
Current transport mechanism of lateral Schottky barrier diodes on β-Ga2O3/SiC structure with atomic level interface | Applied Physics Letters |
| 2024 | |
Freestanding Perovskite Oxide Membranes: A New Playground for Novel Ferroic Properties and Applications | Advanced Functional Materials |
| 2023 |
Citations Analysis
The category
Science: Physics 473
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Silicon carbide on insulator formation using the Smart Cut process and was published in 1996. The most recent citation comes from a 2024 study titled Xenon Nanobubbles and Residual Defects in Annealed Xe‐Implanted Si(001): Analysis by the Combination of Advanced Synchrotron X‐Ray Diffraction and Transmission Electron Microscopy Techniques. This article reached its peak citation in 2004, with 46 citations. It has been cited in 185 different journals, 12% of which are open access. Among related journals, the Applied Physics Letters cited this research the most, with 78 citations. The chart below illustrates the annual citation trends for this article.