Scalable energy-efficient magnetoelectric spin–orbit logic
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date2018/12/03
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Journal
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Indian UGC (journal)
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Refrences73
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Citations462
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Sasikanth Manipatruni
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Dmitri E. Nikonov
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Chia-Ching Lin
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Tanay A. Gosavi
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Huichu Liu
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Bhagwati Prasad
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Yen-Lin Huang
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Everton Bonturim
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Ramamoorthy Ramesh
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Ian A. Young
Cite
Manipatruni, Sasikanth, et al. “Scalable Energy-Efficient Magnetoelectric spin–orbit Logic”. Nature, vol. 565, no. 7737, 2018, pp. 35-42, https://doi.org/10.1038/s41586-018-0770-2.
Manipatruni, S., Nikonov, D. E., Lin, C.-C., Gosavi, T. A., Liu, H., Prasad, B., Huang, Y.-L., Bonturim, E., Ramesh, R., & Young, I. A. (2018). Scalable energy-efficient magnetoelectric spin–orbit logic. Nature, 565(7737), 35-42. https://doi.org/10.1038/s41586-018-0770-2
Manipatruni, Sasikanth, Dmitri E. Nikonov, Chia-Ching Lin, Tanay A. Gosavi, Huichu Liu, Bhagwati Prasad, Yen-Lin Huang, Everton Bonturim, Ramamoorthy Ramesh, and Ian A. Young. “Scalable Energy-Efficient Magnetoelectric spin–orbit Logic”. Nature 565, no. 7737 (2018): 35-42. https://doi.org/10.1038/s41586-018-0770-2.
Manipatruni S, Nikonov DE, Lin CC, Gosavi TA, Liu H, Prasad B, et al. Scalable energy-efficient magnetoelectric spin–orbit logic. Nature. 2018;565(7737):35-42.
Journal Category
Science
Science (General)
Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
| 10.1109/LED.2018.2821923 | 2018 | |||
| A conductive topological insulator with large spin Hall effect for ultralow power spin–orbit torque switching | Nature Materials |
| 324 | 2018 |
| A new spin for oxide interfaces | Nature Physics |
| 67 | 2018 |
| Beyond CMOS computing with spin and polarization | Nature Physics |
| 265 | 2018 |
| 10.1109/LED.2017.2709248 | 2017 |
Refrences Analysis
The category
Science: Physics 52
is the most frequently represented among the references in this article. It primarily includes studies from Nature and Nature Materials. The chart below illustrates the number of referenced publications per year.
Refrences used by this article by year
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
2D Ferroic Materials for Nonvolatile Memory Applications | Advanced Materials |
| 4 | 2024 |
Control of Charge‐Spin Interconversion in van der Waals Heterostructures with Chiral Charge Density Waves | Advanced Materials |
| 1 | 2024 |
Ptychographic Nanoscale Imaging of the Magnetoelectric Coupling in Freestanding BiFeO3 | Advanced Materials |
| 2024 | |
Tuning Stoichiometry for Enhanced Spin‐Charge Interconversion in Transition Metal Oxides | Advanced Electronic Materials |
| 2024 | |
Probing the Spatial Variation of Magnetic Order in Strained SrMnO3 Thin Films Using Spin Hall Magnetoresistance | physica status solidi (RRL) – Rapid Research Letters |
| 2024 |
Citations Analysis
The category
Technology: Electrical engineering. Electronics. Nuclear engineering: Materials of engineering and construction. Mechanics of materials 313
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled EFFECTIVE INTERFERENCE MECHANISM FOR CONDUCTIVITY CONTROL IN MOLECULAR ELECTRONICS and was published in 2019. The most recent citation comes from a 2024 study titled Chains of atoms embedded into transition metal dichalcogenides as one-dimensional half-metallic magnets. This article reached its peak citation in 2022, with 107 citations. It has been cited in 143 different journals, 19% of which are open access. Among related journals, the Physical Review B cited this research the most, with 46 citations. The chart below illustrates the annual citation trends for this article.