Aharonov–Bohm interference in topological insulator nanoribbons
Article Properties
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LanguageEnglish
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DOI (url)
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Publication Date2009/12/13
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Journal
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Indian UGC (journal)
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Refrences30
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Citations680
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Hailin Peng
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Keji Lai
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Desheng Kong
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Stefan Meister
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Yulin Chen
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Xiao-Liang Qi
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Shou-Cheng Zhang
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Zhi-Xun Shen
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Yi Cui
Cite
Peng, Hailin, et al. “Aharonov–Bohm Interference in Topological Insulator Nanoribbons”. Nature Materials, vol. 9, no. 3, 2009, pp. 225-9, https://doi.org/10.1038/nmat2609.
Peng, H., Lai, K., Kong, D., Meister, S., Chen, Y., Qi, X.-L., Zhang, S.-C., Shen, Z.-X., & Cui, Y. (2009). Aharonov–Bohm interference in topological insulator nanoribbons. Nature Materials, 9(3), 225-229. https://doi.org/10.1038/nmat2609
Peng H, Lai K, Kong D, Meister S, Chen Y, Qi XL, et al. Aharonov–Bohm interference in topological insulator nanoribbons. Nature Materials. 2009;9(3):225-9.
Journal Categories
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Science
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Physical and theoretical chemistry
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Materials of engineering and construction
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Refrences
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
Experimental Realization of a Three-Dimensional Topological Insulator, Bi
2
Te
3 | Science |
| 2,951 | 2009 |
Inducing a Magnetic Monopole with Topological Surface States | Science |
| 785 | 2009 |
| 10.1103/PhysRevB.80.085303 | Physical Review B | 2009 | ||
| Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface | Nature Physics |
| 4,956 | 2009 |
| Observation of a large-gap topological-insulator class with a single Dirac cone on the surface | Nature Physics |
| 2,977 | 2009 |
Refrences Analysis
The category
Science: Physics 18
is the most frequently represented among the references in this article. It primarily includes studies from Physical Review Letters The chart below illustrates the number of referenced publications per year.
Refrences used by this article by year
Citations
| Title | Journal | Journal Categories | Citations | Publication Date |
|---|---|---|---|---|
Synthesis of the 2D Ternary Topological Insulator Bi2‐xSbxSe3 with a Low Carrier Concentration and Ultrahigh Carrier Mobility | Advanced Functional Materials |
| 2024 | |
Controlled Formation of Nanoribbons and Their Heterostructures via Assembly of Mass‐Selected Inorganic Ions | Advanced Materials |
| 2 | 2024 |
Distinct Quantum States in Topological Insulator Surfaces of Nanowires and Nanoribbons of Bismuth Selenide (Bi2Se3) | Advanced Materials Interfaces |
| 2024 | |
| Quantum transport in a multi-path graphene Aharonov–Bohm interferometer | Materials Science and Engineering: B |
| 2024 | |
| Electronic Transport and Quantum Phenomena in Nanowires | Chemical Reviews |
| 2024 |
Citations Analysis
The category
Science: Physics 406
is the most commonly referenced area in studies that cite this article. The first research to cite this article was titled Coherent heteroepitaxy of Bi2Se3 on GaAs (111)B and was published in 2010. The most recent citation comes from a 2024 study titled In-plane magnetic field driven conductance modulations in topological insulator kinks. This article reached its peak citation in 2013, with 79 citations. It has been cited in 167 different journals, 13% of which are open access. Among related journals, the Physical Review B cited this research the most, with 77 citations. The chart below illustrates the annual citation trends for this article.